Anisotropic magnetoresistance in manganites: experiment and theory

Fuhr, J. D.; Granada, M.; Steren, L. B.; Alascio, B.

doi:10.1088/0953-8984/22/14/146001

Cited by 28 publications

(32 citation statements)

References 21 publications

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“…30 The model was mainly based on La 1−x Sr x MnO 3 type manganite. In the coming subsection we will summarize important aspects of this model since it may serve as a starting point for the development of more complicated theories of AMR in manganites.…”

Section: Understanding the Mechanism Of Amr In Manganitesmentioning

confidence: 99%

Anisotropic Magnetoresistance in Perovskite Manganites

2011

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We have summarized some important results of the anisotropic transport properties of the prototypical manganite La 1−x CaxMnO 3 as well as a few others. The temperature dependence of anisotropic magnetoresistance in manganites exhibits a peak near the magnetic ordering temperature which differs dramatically from the ones in 3d ferromagnetic metals and alloys. Depending on the strain-driven orbital state, the AMR in manganites could be enhanced dramatically. The AMR in manganites is much larger than in ferromagnetic metals, where its magnitude is only of the order of a few percent. At low fields (below few kG) the intrinsic magnetocrystalline anisotropy becomes important and the dependence of resistance on angle changes to a more switching-like behavior. The magnitude of the switching is sufficiently large such that this phenomenon could be useful in spintronics for magnetic field sensing and nonvolatile memory applications. Moreover, at temperatures far below the metal insulator transition temperatures, the AMR in LCMO/LAO also flips and changes a sign in contrast to LCMO/STO films. Also sign flip takes place in charge and orbital ordered manganites exhibiting field induced ferromagnetism. Polycrystalline manganite samples also exhibit strong AMR. At lower temperatures the dependence of the AMR on temperature is dramatically different in polycrystalline samples than the epitaxial or single crystal samples. The behavior in the the polycrystalline samples could be governed by spin-polarized transport across the grain boundaries.

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Section: Understanding the Mechanism Of Amr In Manganitesmentioning

confidence: 99%

Anisotropic Magnetoresistance in Perovskite Manganites

2011

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“…Indeed, in AMR, the variation of the resistivity depends on the orientation of the magnetization M with respect to both the current density J and the crystal axes. From the angular dependence of the AMR [10,11], information on the spin-orbit coupling (SOC) [12] and the magneto-elastic coupling (Jahn-Teller distortions) can be obtained. However, up to now, reports about the possibility to electrostatically modulate the AMR amplitude have not been presented.…”

Section: Introductionmentioning

confidence: 99%

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

et al. 2014

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Ferroelectric field-effect devices based on perovskite oxide materials offer a new possibility to exploit emergent interfacial effects such as the electrostatic modification of the transport and magnetic properties of strongly correlated materials and to prove the magneto-electric coupling at the interface between the two different ferroic materials. Here we report on the reversible modulation of the interfacial magnetic and magnetotransport properties of La 0.825 Sr 0.175 MnO 3 thin films induced by switching the ferroelectric polarization of a top PbZr 0.2 Ti 0.8 O 3 layer. Anisotropic magnetoresistance (AMR) measurements were performed applying a magnetic field H in a plane perpendicular to the current density. By rotating H from the out-of-plane towards the in-plane direction, upon the ferroelectric polarization switching, a modulation of the normalized AMR amplitude was achieved. The dynamical electrostatic coupling at the interface of the two oxides is responsible for a reconstruction of the Mn 3de g orbitals which in turn affects the surface magnetic anisotropy of the magneto-electric system. The present work might have a broader impact, including in the field of multiferroic tunnel junctions, due to a better understanding of the coupling at the interface of the two ferroic oxides where the influence of the polarization on the magnetic degree of freedom is accomplished.

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“…ρ av is the average resistivity and defined as ρ av ¼(1/3)ρ J þ (2/3)ρ ? [18]. The dependence of resistivity on the angle θ follows a cos 2 (θ) dependence for all the films and over the whole temperature range studied, where θ¼01 corresponds to the configuration where H is perpendicular to the direction of J.…”

Section: Resultsmentioning

confidence: 82%

“…The solid lines in these figures are the fits to the theoretical expression derived for the angular dependence of the resistivity in ferromagnetic metals ρ(θ)¼Aþ[ρ J À ρ ? ]cos 2 (θ) [18].…”

Section: Resultsmentioning

confidence: 99%

“…We systematically increased the density of grain boundaries in our polycrystalline samples and investigated [14][15][16][17][18][19] their influence on the AMR. Our results suggest that an anisotropic spin polarized transport model is needed for understanding the temperature and the low field CMR in manganites and the AMR in manganite samples could be tuned for large temperature ranges at low magnetic fields by controlling the grain size.…”

Section: Introductionmentioning

confidence: 99%

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