Anisotropic etching of silicon in TMAH solutions

Tabata, Osamu; Asahi, Ryouji; Funabashi, Hirofumi; Shimaoka, Keiichi; Saito, Susumu

doi:10.1016/0924-4247(92)80139-t

Cited by 457 publications

(276 citation statements)

References 6 publications

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“…This issue can be resolved using diluted TMAH (5%~10%), which results in very rough etched silicon surface [30]. By using 10% TMAH, the stiction was reduced significantly as shown in Fig (6a).…”

Section: Fabricationmentioning

confidence: 94%

Optical Lever Based Parylene Cantilevers for Biochemical Sensing

Zheng¹,

Khalid²,

Wang³

et al. 2008

TOOPTSJ

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This paper reports the development of optical lever based parylene cantilevers for biochemical sensing. A simple but effective process to fabricate parylene cantilevers using Tetramethylammonium Hydroxide (TMAH) bulkmicromachining was demonstrated. A scheme of using anchoring holes was employed to prevent the peeling off of parylene during TMAH etching. Moreover, ridge structures were incorporated on the cantilever tip to achieve a flat surface for a well-controlled reflected laser spot. An analytical model was presented to guide the design of the cantilever sensor. The stability of the parylene cantilever sensor in water and buffer solution was demonstrated. Based on optical lever method, the parylene cantilevers successfully detected vapour phase alkanethiols, and DNA molecules in buffer solution.

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Section: Fabricationmentioning

confidence: 94%

Optical Lever Based Parylene Cantilevers for Biochemical Sensing

Zheng¹,

Khalid²,

Wang³

et al. 2008

TOOPTSJ

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“…We have therefore developed an alternative process using TMAH, which is an IC compatible anisotropic etch. Etch rates with TMAH are, however, generally slower than with KOH, 39 so deep reactive ion etching (DRIE) has been employed to remove most of the Si, leaving just the final 50 6 25 lm of Si below the Ge layer to be removed by wet etching in TMAH.…”

Section: Scalable Two-step Dry/wet Etching Processmentioning

confidence: 99%

“…The final step in membrane fabrication was to place the whole patterned wafer into an 80 C 25% TMAH heated bath, which has been reported to have a Si etch rate of 0.45 6 0.02 lm min À1 . 39 To ensure that the Si was completely removed from the back-side of the Ge layer, and in some cases to thin the Ge membrane itself, the wafer was etched for up to 420 min. From interferometry measurements using a Reflectometer Sci-soft Filmtek 2000M (with wavelengths 380-890 nm), the etch rate of Ge in the TMAH bath was measured to be 0.18 6 0.09 nm min À1 , which is much lower than the 40 nm min À1 reported by Li for polycrystalline Ge.…”

Section: Scalable Two-step Dry/wet Etching Processmentioning

confidence: 99%

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah

Rhead

Halpin

et al. 2014

Journal of Applied Physics

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-forprofit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:Copyright ( A note on versions:The version presented in WRAP is the published version or, version of record, and may be cited as it appears here.For more information, please contact the WRAP A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Perot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials. V C 2014 AIP Publishing LLC. [http://dx

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“…To make smooth transition between flexible and stiff portions, silicon wet etching in 7% Tetra Methyl Ammonium Hydroxide (TMAH) was performed at 80 o C. The silicon-etching rate depends on crystal planes in TMAH. (100) crystal plane shows 20 times faster etching rate than that of (111) plane [4]. Angled slope of the silicon removes step problem in next metallization process for recording sites, even BCB offers a degree of planarization of nearly 100% (Fig.…”

Section: Fabricationmentioning

confidence: 99%

“…RIE was used to etch away the BCB residue on the gold surface using a 10µm thick photoresistmasking layer. A CF 4 and O 2 mixture was used for this descum process in RIE (100Watt, 100mTorr, 10sccm CF 4 , and 40sccm O 2 ) [5].…”

Section: Fabricationmentioning

confidence: 99%