Angular-resolved energy flux measurements of a dc- and HIPIMS-powered rotating cylindrical magnetron in reactive and non-reactive atmosphere

Leroy, Wouter; Konstantinidis, Stéphanos; Mahieu, Stijn; Snyders, Rony; Depla, Diederik

doi:10.1088/0022-3727/44/11/115201

Cited by 33 publications

(17 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, the heating due to energetic particle bombardment might melt thermally sensitive substrates, such as plastics. Comparative studies of the energy flux in HiPIMS and DCMS have shown that the total energy flux is of the same order 53 or lower 54,55 in the case of HiPIMS sputtering. This difference can be explained by the lower deposition rate for HiPIMS resulting in fewer bombarding particles per time unit (see Section II D).…”

Section: B Plasma Conditionsmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

View full text Add to dashboard Cite

High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

show abstract

Section: B Plasma Conditionsmentioning

confidence: 99%

An introduction to thin film processing using high-power impulse magnetron sputtering

2012

View full text Add to dashboard Cite

show abstract

“…However, the reduction in the deposition rate was not more pronounced for materials with low sputtering yield as had been concluded from measured data. 23 Konstantinidis et al 192 find that the deposition rate depends on the pulse length and increases from 20% to 70% of dcMS values as the pulse length is decreased from 20 to 5 ls for the same average power of 300 W when sputtering a titanium target in argon at 1.33 Pa. For a rotating cylindrical magnetron Leroy et al 191 find the deposition rate to be up to 75% lower for HiPIMS compared to dcMS, and the decrease in deposition rate becomes more pronounced with increased pulse length. This may be due to the fact that the shorter pulse length does not allow the gas rarefaction, self-sputtering and other processes to develop (these mechanisms will be discussed in more detail in Sec.…”

Section: Deposition Ratementioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

603

437

View full text Add to dashboard Cite

The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

show abstract

“…However, the introduction of HiPIMS may further increase the process complexity, since the trajectory for ionised sputtered material leaving the target differs for HiPIMS as compared to e.g. DCMS [27,28], and any preferential resputtering effects may be more pronounced owing to the high ion irradiation of the growing film. Reports on nonreactive HiPIMS from compound targets are scarcely found, although examples exist.…”

Section: Introductionmentioning

confidence: 99%

ZrB2 thin films grown by high power impulse magnetron sputtering from a compound target

et al. 2012

View full text Add to dashboard Cite

ZrB 2 thin films were grown on Si by high power impulse magnetron sputtering (HiPIMS) from a compound target in an industrial deposition system. By keeping a constant average power while modifying the HiPIMS pulse repetition frequency, the pulse peak current and thereby the degree of ionisation was varied. The films were characterised using X-ray diffraction techniques, scanning electron microscopy, time-of-flight elastic recoil detection analysis, and four-point probe measurements. It was found that the composition of the films matched closely that of the target material, and the films were low in contamination. The films were crystalline with a strong (000n) preferred orientation, and that the residual stress could be adjusted, from tensile to compressive, by increasing the degree of ionisation. The film morphology appeared dense, with a smooth surface, and the resistivity was found to range from 180 to 250 µΩcm with no clear dependence on frequency in the investigated parameter range.

show abstract

Angular-resolved energy flux measurements of a dc- and HIPIMS-powered rotating cylindrical magnetron in reactive and non-reactive atmosphere

Cited by 33 publications

References 38 publications

An introduction to thin film processing using high-power impulse magnetron sputtering

An introduction to thin film processing using high-power impulse magnetron sputtering

High power impulse magnetron sputtering discharge

ZrB2 thin films grown by high power impulse magnetron sputtering from a compound target

Contact Info

Product

Resources

About