Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation

Abstract

Experimental results showing angular dependence for charge collection in SOI transistors under heavy ion irradiation are presented. Geant4 and Synopsys Sentaurus simulations are performed to analyze these results in terms of direct ionization effects. The influence of the beam direction in relation to that of the transistor's channel on the transistor's response is underlined. Depending on the considered beam direction, deviation from the inverse-cosine law is shown to vary from 0% to 30%. These differences seem to be independent of the ion energy. However, the use of different ion species may hide this possible effect.

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

“…Device-orientation effects have been receiving widespread concern recently. [4,16] If the device under test is anisotropic topologically, tilted ion strikes performed at different device-orientations may induce quite different SEE results. As shown in Table 3 of Section 3, preferable DBU pattern is observed for normally incident ions, which suggests that the MBU features for along-x-axis direction and along-y-axis direction of this anisotropic device can be different.…”

“…[1][2][3] Earth-based testing is thus of primary importance to guarantee the reliability of integrated circuits (IC) for space missions. [4] During laboratory testing at accelerators, angled ion strikes are often used to achieve higher effective linear energy transfer (LET) values conveniently by…”

“…However, many experimental results have shown the inherent failings of this effective LET method. [4,[7][8][9] Previous studies mainly focused on the failing mechanisms and corrections of this approach in terms of the breakdown of thin RPP assumption for small-geometry devices, [10][11][12] or the angle-invariant funneling and diffusion charge collection processes. [5,10,[13][14][15] In addition, device-orientation effects [16][17][18] has also received increasing attention recently.…”

Influence of edge effects on single event upset susceptibility of SOI SRAMs

“…In fact, the influence of tilted irradiations of heavy ions on the charge collection at PN junctions and SOI transistor has also been investigated by other authors [13][14][15]. The approach of upset correction by cosðhÞ appears to result in different cross-sections for deeper devices for the same effective LET [16][17][18][19].…”