Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Zhang, Zhangang; Liu, Jie; Hou, Mei; Sun, Yizhuo; Su, Hong; Duan, Jinglai; Mo, Dan; Yao, Huijun; Luo, Junzhou; Gu, Shuhang; Geng, Chao; Xi, Kai

doi:10.1088/1674-1056/22/8/086102

Cited by 6 publications

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1] What is worse, an increase of packing densities results in the multiple node charge collection becoming more obvious. [2] This means that one incidence particle can impact more adjacent nodes which pose a significant problem for traditional SEU mitigation techniques like error correction coding (ECC). [3] As we can see, multiple cell upset (MCU) can be expected to dominate the error cross section in the future.…”

Section: Introductionmentioning

confidence: 99%

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Pan¹,

Guo²,

Luo³

et al. 2018

Chinese Phys. B

View full text Add to dashboard Cite

In our previous studies, we have proved that neutron irradiation can decrease the single event latch-up (SEL) sensitivity of CMOS SRAM. And one of the key contributions to the multiple cell upset (MCU) is the parasitic bipolar amplification, it bring us to study the impact of neutron irradiation on the SRAM's MCU sensitivity. After the neutron experiment, we test the devices' function and electrical parameters. Then, we use the heavy ion fluence to examine the changes on the devices' MCU sensitivity pre-and post-neutron-irradiation. Unfortunately, neutron irradiation makes the MCU phenomenon worse. Finally, we use the electric static discharge (ESD) testing technology to deduce the experimental results and find that the changes on the WPM region take the lead rather than the changes on the parasitic bipolar amplification for the 90 nm process.

show abstract

Section: Introductionmentioning

confidence: 99%