Angular dependence of planar Hall effect of amorphous Co/sub 81/Nb/sub 19/ thin film

We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer.

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Optimization of planar Hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

Kim¹,

Park

Kim

2000

Journal of Applied Physics

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Hysteresis loop of planar Hall effect in CoCr films

1999

Journal of Applied Physics

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Micrometer devices of Co85Cr15 film with Hall bar shape were made using standard electron beam lithography and lift-off process. The film was thermally deposited without bias field and the sample was kept at room temperature during evaporation. The Hall voltage, measured at room temperature, showed square hysteresis loops with an external magnetic field applied in the direction close to the film plane. Based on the variation of the Hall voltage measured under different directions of external magnetic field, the magnetic easy axis was verified to be along the long axis of the device. The formation of the easy axis along the narrow wire due to the physical confinement as an intrinsic mechanism is discussed.

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Angular dependence of planar Hall effect of amorphous Co/sub 81/Nb/sub 19/ thin film

Abstract: Extra ordinary Hall resistivity, AMR and planar Hall effect wewe use to study Co81Nb19 thin film as a function of in-plane applied field at different angles.Negative pi\(H)p i ( H ) is observed. The planar Hall resistivity ( p~) was studied at various angles between

Cited by 2 publications

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Optimization of planar Hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

Optimization of planar Hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

Hysteresis loop of planar Hall effect in CoCr films

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