Optimization of planar Hall resistance using biaxial currents in a NiO/NiFe bilayer: Enhancement of magnetic field sensitivity

Abstract

We present the optimized planar Hall resistance (PHR) obtained by using biaxial currents in a NiO (30 nm)/NiFe (30 nm) bilayers. The measured PHR, Rxy, had a drift resistance due to the intrinsic and extrinsic characteristics caused by magnetization and sample geometry, respectively. The drift voltage due to drift resistance restricted the PHR ratio and could be compensated for by using the auxiliary current Ix for the sensing current Iy to enhance PHR ratio. A huge PHR ratio over 3000% (±1500%) with the linearity and small hysteresis for the magnetic field experimentally obtained using biaxial currents and could be explained by the anisotropic characteristic of the magnetoresistance, which is influenced by the exchange coupling field (Hex) induced by the antiferromagnetic NiO layer.

Hybrid planar Hall-magnetoresistance sensor based on tilted cross-junction

“…When the sensor junction starts to tilt, the MR components will contribute to the total sensor output voltage. The drift voltage and then the MR voltage depend on the sinusoidal function of the tilt angle (∼I × R s × sin ζ ) [11]. Practically, this behaviour of the drift voltage is verified both theoretically and experimentally (see figure 5).…”

Magnetizing angle dependence of planar Hall resistance in spin-valve structure

“…For the ferromagnetic thin film, the transverse electric field, governing PHR, is given by [4,[6][7][8] E y ¼ jðr k À r ? Þ sin y cos y,…”

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

“…The list of search keywords for publication statistics of parallel and perpendicular anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunnelling magnetoresistive (TMR) sensors is shown in Table II. Here, the perpendicular AMR refers to the planar Hall magnetoresistance/resistance effect [212][213][214][215][216][217][218]. The number of publications of GMR sensors exhibits an explosive growth after the discovery of GMR effect in 1988 [1,2].…”