Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Tsormpatzoglou, A.; Tassis, D. H.; Dimitriadis, C. A.; Ghibaudo, G.; Collaert, N.; Pananakakis, G.

doi:10.1016/j.sse.2010.10.022

Cited by 23 publications

(5 citation statements)

References 21 publications

(26 reference statements)

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“…The experimental finding published by Tsormpatzoglou et al [35] and this threshold voltage model are likewise quite close to one another. According to the report, a threshold voltage of about 0.32 V (for L = 50 nm, = 65 nm, and = 25 nm) was attained in triple-gate FinFET.…”

Section: Channel Length Variationsupporting

confidence: 86%

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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An inversion charge-based threshold voltage model is proposed for 10 nm channel length Tri-gate (TG) FinFET. The variation threshold voltage has been studied with respect to fin width W f i n for different fin height H f i n and channel length L . The effect of width quantization has been explained with the help of the quantum mechanical effect (QME). A precise comparison of threshold voltage in terms of classical mechanics and quantum mechanics depicts the presence of width quantization in short channel device. The improvement of the short channel effects (SCEs), like subthreshold swing (SS), drain-induced barrier lowering (DIBL) and threshold voltage roll off have been studied. The impact of channel length to fin width ratio on DIBL and S S has been examined. The improvement of the SCEs at the same oxide thickness has been observed for high-k dielectric material. The potential and effect of hafnium oxide (HfO2) have been discussed and validated using technology computer-aided design (TCAD) simulation.

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Section: Channel Length Variationsupporting

confidence: 86%

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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“…Either by creating a symmetrical structure and asymmetrical structure for the analysis to be convenient. For instance, Tsormpatzoglou et al [40] derived two natural lengths for Tri-Gate MOSFET (asymmetrical structure) by splitting them into symmetrical and asymmetrical DG MOSFETs to deduce a close-form expression of the threshold voltage. In respect of this, the present research work has two natural lengths with respect to the inner and outer gates because the device structure is asymmetrical.…”

Section: )mentioning

confidence: 99%

Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET

Uchechukwu

Srivastava

2020

IEEE Access

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The natural length of MOSFETs helps to describe the potential distribution in the Silicon substrate. This natural length varies in different device structures, from a single gate to multi-gate device geometry. To measure the short channel effects degree, the natural length should be known because various vital parameters such as OFF-current, Roll-off threshold voltage, and drain induced barrier lowering depend on it. In this research work, authors have presented a scaling theory for Cylindrical Surrounding Double-Gate (CSDG) MOSFET, which guide the device design. The scaling method has been derived, based on the application of the Poisson equation, in a cylindrical structure using Parabolic Potential Approximation (PPA) along the radial direction (substrate part only). Furthermore, a comparison with cylindrical surrounding-gate MOSFETs, Silicon-on-insulator, and double-gate device geometries has been obtained. The results obtained using the PPA model show that CSDG MOSFET has the least natural length, making it a better component for SCEs immunity.

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“…The threshold voltage (V Th ) and its dependence on temperature is an important parameter of any FET structure for device evaluation and circuit design. Several works took place in the literature on its modeling for MOSFETs [1][2][3][4][5][6]. However, there is a lack of similar work for power JFETs structure.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

2021

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The wide-bandgap (WBG) semiconductor devices for modern power electronics require intensive efforts for the analysis of the critical aspects of their operation. In recent years, silicon carbide (SiC) based field effect transistor have been extensively investigated. Motivated by the significant employment of the SiC Vertical Junction Field Effect transistors with lateral channel (LC-VJFET) in the development of high-voltage and high temperature applications, the properties of the LC-VJFET device are investigated in this work. The most important normally-ON LC-VJFET parameter is their threshold voltage (VTh), which is defined as the gate-to-source voltage necessary to block the device. The higher complexity of the blocking operation of the normally-ON device makes the accurate knowledge of the VTh as a fundamental issue. In this paper, a temperature dependent analytical model for the threshold voltage of the normally-ON LC-VJFET is developed. This analytical model is derived based on a numerical analysis of the electrical potential distribution along the asymmetrical lateral channel in the blocking operation. To validate our model, the analytical results are compared to 2D numerical simulations and experimental results for a wide temperature range.

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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

Cited by 23 publications

References 21 publications

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

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