Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor

Abstract

In this study, we derive an analytical model of an electric potential of a double-gated (DG) fully depleted (FD) junctionless (J-less) transistor by solving the two-dimensional Poisson's equation. On the basis of this two-dimensional electric potential model, subthreshold current and swing can be calculated. Threshold voltage roll-off can also be estimated with analytical forms derived using the above model. The calculated results of electric potential, subthreshold current and threshold voltage roll-off are all in good agreement with the results of technology computer aided design (TCAD) simulation. The model proposed in this paper may help in the development of a compact model for simulation program with integrated circuit emphasis (SPICE) simulation and in providing deeper insights into the characteristics of short-channel J-less transistors.

Physically Based Analytical Modeling of 2D Electrostatic Potential for Symmetric and Asymmetric Double Gate Junctionless Field Effect Transistors in Subthreshold Region

“…Besides that JLFETs provide reduced SCEs, an excellent SS, a very low leakage current and high Ion/Ioff ratio compared to conventional MOSFETs (10)(11). A number of studies based on simulations and analytical solutions have been performed to anticipate the performance of symmetric DG JLFET (12)(13)(14)(15). However, a complete analytical treatment for both symmetric and asymmetric DG JLFET considering similar and dissimilar gate biased configuration is necessary to make a comparative study of their performance.…”