Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Bakeroot, Benoit; Stockman, A.; Posthuma, Niels; Stoffels, Steve; Decoutere, Stefaan

doi:10.1109/ted.2017.2773269

Cited by 82 publications

(52 citation statements)

References 17 publications

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“…As the temperature increases, the threshold voltage ( V T ) and the trans‐conductance ( g m ) decrease. A given analytical model of V T is described as following [12]:

\begin{matrix} right leftthickmathspace.5em \\ V_{T} & = ϕ_{Bn} + ψ_{bi} + V_{G_S} + ψ_{s} \\ - (Δ E_{c 2} - Δ E_{c 1}) / q - Δ V_{b} \end{matrix}

where ϕ Bn is the Schottky barrier height of the metal towards the conduction band, ψ bi is the built‐in potential of the Schottky contact, V G_S is the reverse bias on the Schottky contact, ψ s is the surface potential at the p‐GaN/AlGaN barrier interface, Δ E C 1 is the conduction band offset between the p‐GaN and the barrier, Δ E C 2 is the conduction band offset between the barrier and the GaN channel, and Δ V b is the voltage drop in the barrier.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Liu

Tian

et al. 2020

IET Power Electronics

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High-temperature electrical performances of enhancement-mode (E-mode) high electron mobility transistor with ptype Gallium Nitride (GaN) gate cap are evaluated here. The physics-based mechanisms behind the behaviours are also analysed by the simulations and analytical models. For static electrical performances, the changes of GaN bandgap and the interface states or traps are considered to be influential factors for the little variations of threshold voltage (V T). Meanwhile, the on-state resistance increases and trans-conductance decreases at high temperatures due to the reduction in electron mobility (µ eff). As for blocking characteristic, high temperature-induced increase of leakage current may result from multi-reasons, such as the increase of intrinsic carrier concentration and lowering of trap barrier. In addition, a segmental method is presented to understand the gate leakage current at high temperatures. For capacitance characteristics, the increase of channel resistance makes the measured gate capacitance lower than the intrinsic value. For dynamic electrical performances, the high temperature-induced decrease of µ eff leads to the increase of plateau voltage, bringing the decreases of total switching time and total switching energy loss, which are quite different from those of the devices with traditional metal-oxide-semiconductor structures.

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“…As the temperature increases, the threshold voltage ( V T ) and the trans‐conductance ( g m ) decrease. A given analytical model of V T is described as following [12]:

\begin{matrix} right leftthickmathspace.5em \\ V_{T} & = ϕ_{Bn} + ψ_{bi} + V_{G_S} + ψ_{s} \\ - (Δ E_{c 2} - Δ E_{c 1}) / q - Δ V_{b} \end{matrix}

Section: Resultsmentioning

confidence: 99%

“…As the temperature increases, the threshold voltage (V T ) and the transconductance (g m ) decrease. A given analytical model of V T is described as following [12]:…”

Section: Device Structures and Simulationsmentioning

confidence: 99%

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

Liu

Tian

et al. 2020

IET Power Electronics

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“…Efthymiou et al [152] investigated effects of the p-GaN doping and gate metal work function on the threshold voltage of devices. Bakeroot et al [153] developed an analytical model for calculation of the threshold voltage for p-GaN HEMTs, they studied the contributions of p-type doping profile, AlN molar fraction of AlGaN layer and AlGaN layer thickness to the threshold voltage. Moreover, in addition to the structures of p-GaN gate, recess gate and F-treatment, some novel E-mode HEMTs have been also proposed and studied through simulations.…”

Section: Algan/gan Device Simulationmentioning

confidence: 99%

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

et al. 2018

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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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“…In recent years, the properties of wide-bandgap (WBG) materials, especially Gallium Nitride (GaN), have gained a lot of attention for high-power, high-frequency, and high-temperature application in the power and microwave range, because of large bandgap, high breakdown electric field, and high mobility two-dimension electron gas (2DEG) [1,2,3,4,5]. A p-type doped GaN layer is covered locally under the gate in order to achieve enough high threshold voltage with a low specific on-resistance [6,7,8,9,10]. However, the capabilities of a full integrated GaN power electronics are still limited by several reliability issues when GaN HEMTs are operated between kHz to MHz switching frequencies [11,12,13,14,15,16].…”

Section: Introductionmentioning

confidence: 99%

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

Liu

et al. 2020

IEICE Electron. Express

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In this work, the thermal effect in the dynamic on-resistance (R on) degradation of normally-off p-GaN AlGaN/GaN HEMTs on SiC substrates has been analyzed using pulse-mode voltage stress. Compare to the significant degradation characteristics of GaN-on-Si HEMTs, a suppressed dynamic R on degradation is achieved in GaN-on-SiC due to higher thermal boundary conduction with less ionized acceptor-like buffer traps. Different electrical characteristics have been discussed to reveal the traps mechanisms related to thermal effect. Finally, two-dimension device simulation has been carried out to probe the physical insight into the thermal effect on the dynamic R on degradation.

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Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Cited by 82 publications

References 17 publications

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Thermal effect on dynamic R<sub>on</sub> degradation of p-GaN AlGaN/GaN HEMTs on SiC substrates

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