Analytical model for the temperature dependence of the spectral responsivity of silicon

Hartmann, Jürgen; Fischer, Joachim; Johannsen, Uwe; Werner, Lutz

doi:10.1364/josab.18.000942

Cited by 23 publications

(9 citation statements)

References 12 publications

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“…There are many sources of systematic error in a hyperspectral image. For example, the spectral response of silicon is temperature dependent [33]. More importantly, the light source that illuminates the scene is not spectrally flat, which introduces a spectral bias and can vary significantly with time in the case of natural light [34].…”

Section: Introductionmentioning

confidence: 99%

Image Correction and In Situ Spectral Calibration for Low-Cost, Smartphone Hyperspectral Imaging

et al. 2022

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Developments in the portability of low-cost hyperspectral imaging instruments translate to significant benefits to agricultural industries and environmental monitoring applications. These advances can be further explicated by removing the need for complex post-processing and calibration. We propose a method for substantially increasing the utility of portable hyperspectral imaging. Vertical and horizontal spatial distortions introduced into images by ‘operator shake’ are corrected by an in-scene reference card with two spatial references. In situ light-source-independent spectral calibration is performed. This is achieved by a comparison of the ground-truth spectral reflectance of an in-scene red–green–blue target to the uncalibrated output of the hyperspectral data. Finally, bias introduced into the hyperspectral images due to the non-flat spectral output of the illumination is removed. This allows for low-skilled operation of a truly handheld, low-cost hyperspectral imager for agriculture, environmental monitoring, or other visible hyperspectral imaging applications.

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Section: Introductionmentioning

confidence: 99%

Image Correction and In Situ Spectral Calibration for Low-Cost, Smartphone Hyperspectral Imaging

et al. 2022

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“…In contrast, there is almost no change at 360 nm over a temperature range of 100 °C. This has a direct impact on the internal quantum efficiency as already reported in normal photodiodes, especially at long wavelengths [17].…”

Section: Jinst 17 P12009mentioning

confidence: 57%

“…The third component exposed to the temperature cycle would be the calibrated photodiode. Its responsivitiy is provided at 25 °C [14] but the sensitivity of photodiodes can vary with temperature and wavelength [16][17][18].…”

Section: Temperature Dependence Of the Setupmentioning

confidence: 99%

Characterization of the photo-detection efficiency temperature dependence of silicon photomultipliers from -30°C to 70°C

Schmailzl

Piemonte²,

Schelhase³

et al. 2022

J. Inst.

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We present photon detection efficiency (PDE) measurements of three different silicon photomultipliers (SiPM) and report the temperature coefficient of this parameter using a direct measurement method. This study provides first results in such a wide temperature and wavelength range, from -30°C to 70°C and from 365 nm to 900 nm respectively. To carry out this study we developed a setup providing stable illumination of the device under test in temperature. The PDE is evaluated using a photon-counting method and the wavelength-dependent PDE temperature coefficients of all devices are determined. The different designs are compared and the individual contributors to the temperature dependence of the PDE are discussed. The PDE is shown to be linearly dependent on temperature for all designs and the temperature coefficient depends on wavelength and bias voltage. At shorter wavelengths, the temperature dependency approaches values close to zero for one design whereas all devices show increasing temperature coefficients for increasing wavelengths. This study shows that despite the more complex designs of SiPMs, compared to silicon photodiodes, similar factors contribute to the temperature dependence of the PDE.

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“…2). Hence, the quantum efficiency dependence on the temperature could be explained by the temperature-dependent absorption coefficient and the reflectivity of the Si dominating in the longer and in the shorter wavelengths, respectively [1]. As one can see from Fig.…”

Section: Spectroradiometersmentioning

confidence: 87%

Colorimetry of LEDs with array spectroradiometers

Nevas

Lindemann

Sperling

et al. 2009

MAPAN

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Compact and cost-effective array spectroradiometers are increasingly used in photometric and radiometric measurements. In this report, results of the colorimetric characterisation of LEDs using both low-end and high-end array spectroradiometers are compared to those obtained with the help of a conventional scanning double-monochromator spectroradiometer. Problems related to the utilisation of the array spectroradiometers for such applications are discussed. Effects of the most important instrumental parameters, such as the stray light suppression and the bandpass irregularities, are also assessed. The comparison showed an agreement among the results provided by the different spectroradiometers within the typical uncertainty levels, even for the low-end devices.

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Analytical model for the temperature dependence of the spectral responsivity of silicon

Cited by 23 publications

References 12 publications

Image Correction and In Situ Spectral Calibration for Low-Cost, Smartphone Hyperspectral Imaging

Image Correction and In Situ Spectral Calibration for Low-Cost, Smartphone Hyperspectral Imaging

Characterization of the photo-detection efficiency temperature dependence of silicon photomultipliers from -30°C to 70°C

Colorimetry of LEDs with array spectroradiometers

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