Characterization of the photo-detection efficiency temperature dependence of silicon photomultipliers from -30°C to 70°C

Abstract

We present photon detection efficiency (PDE) measurements of three different silicon photomultipliers (SiPM) and report the temperature coefficient of this parameter using a direct measurement method. This study provides first results in such a wide temperature and wavelength range, from -30°C to 70°C and from 365 nm to 900 nm respectively. To carry out this study we developed a setup providing stable illumination of the device under test in temperature. The PDE is evaluated using a photon-counting method and the wavelength-dependent PDE temperature coefficients of all devices are determined. The different designs are compared and the individual contributors to the temperature dependence of the PDE are discussed. The PDE is shown to be linearly dependent on temperature for all designs and the temperature coefficient depends on wavelength and bias voltage. At shorter wavelengths, the temperature dependency approaches values close to zero for one design whereas all devices show increasing temperature coefficients for increasing wavelengths. This study shows that despite the more complex designs of SiPMs, compared to silicon photodiodes, similar factors contribute to the temperature dependence of the PDE.

Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

“…Recently, the record-high PDE of the TAPD has been confirmed and its relatively good stability in a wide temperature range from −30 °C to 70 °C was reported in [ 86 ] ( Figure 13 a).…”

“…Moreover, NIR PDE of 22% at 905 nm is also higher than that of modern NIR SiPMs for LIDAR applications developed by Broadcom (PDE = 18% [84]), On Semiconductor (PDE = 18.5% [85]) and Hamamatsu (PDE = 9% for MPPC S15639-1325PS) due to a 12-µmthick epilayer without borders between cells. Recently, the record-high PDE of the TAPD has been confirmed and its relatively good stability in a wide temperature range from −30 • C to 70 • C was reported in [86] (Figure 13a).…”

“… Features of Tip APD: ( a ) dependence of PDE on operating temperature for different wavelengths. Reproduced from [ 86 ] under open access license (CC BY). ( b ) Dependence of estimated DCR including correlated noise on overvoltage in comparison with KETEK SiPM of the same 15- m pitch.…”

Enhancing photodetection efficiency of CMOS SiPMs using virtual guard rings in a standard 0.35 µm process

“…The setup for our measurements was proposed and described in [ [3]]. We performed measurements to determine the true PDE of our designed CMOS SiPM, with excluding XT and APP.…”

“…However, one of the key characteristics of these detectors are their photon detection efficiency (PDE), which is defined as the ratio of the number of detected photons to the number of incident photons. The PDE of SiPMs is given by the product of four factors [3]: $$$$\begin{equation} PDE = \epsilon \cdot IQE \cdot P_{trig} \cdot OT. \end{equation}$$$$…”