Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Bejenari, Igor; Schröter, M.; Claus, Martin

doi:10.1109/ted.2017.2721540

Cited by 17 publications

(12 citation statements)

References 56 publications

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“…In these models, the simulated I − V characteristics agree with experimental data in a limited bias range [19]. The reason is that the analytical expression for the drain current corresponding to the thermionic emission with a shifted Fermi level and including energy-independent transmission can be used at small bias, when the contribution of thermally excited electrons in the total current is large enough [24]. The analytical current calculations on the basis of drift-diffusion model do not properly take into account the effect of SB tunneling and BTBT on the electron transport [25], [26].…”

Section: Introductionmentioning

confidence: 55%

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Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Bejenari

2019

Preprint

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A simple model based on the WKB approximation for one-dimensional ballistic multi-gate reconfigurable fieldeffect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the twogate and triple-gate RFETs is performed based on the numerical integration of the current integral.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), bandto-band tunneling (BTBT), Wentzel-Kramers-Brillouin (WKB) approximation.

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Section: Introductionmentioning

confidence: 55%

“…To find an analytical expression for the current, we use a piece-wise approximation for f F D (E) given by [24]…”

Section: B Piece-wise Approximation Of Fermi-dirac Distribution Functionmentioning

confidence: 99%

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Bejenari

2019

Preprint

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“…The ensemble velocity average from the BTE solution for increasing applied electric field is shown in figure 8. It is conspicuous that, although there is significant velocity overshoot in the system, the velocity at the source-drain interface approximates the thermal velocity of the sample, 7 1…”

Section: Resultsmentioning

confidence: 99%

“…In general, the nature of transport in nanoscale devices is a function of the active region of the device. An important characteristics of nanoscale contacts is the presence of schottky barriers [1] at the electrodenanoscale interface which significantly limits device conductance and dwarfs current delivery capabilitya key factor in device application and performance.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modelling of Charge Transport Properties of Individual Single-Wall Carbon Nanotubes

Ijeomah

Samsuri

Obite

et al. 2018

IJETS

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Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibrium green function (NEGF) is limited by the fact that it requires excessive quantum of memory and computational time, having quasi-separable matrices that are extremely convoluted to solve. This work exploits the Boltzmann Transport Equation (BTE) to assess the transport properties of carbon nanotubes. Previous works on solving the BTE have employed either a stochastic method or an approximate method, both of which do not possess the necessary properties for practical device applications. Therefore, this work represents the first direct theoretical solution of the BTE for one-dimensional carbon nanotubes that can be utilized for practical device applications. The complete spectrum of transport in CNTs extending from ohmic to high-field through ballistic transmission is examined to delineate plethora of transport properties. The transport for arbitrary values of the electric field is based on the BTE applied to experimental data on CNTs. In the limit of low field, the mobility expressions are obtained in terms of the mean free path (mfp) that is distinctly shorter than the length of the sample. The ohmic resistance is quantized a value of 6.453k-ohms consistent with experimental findings with transmission approaching unity as channel length shrinks below the carrier mfp. The emission of a quantum was observed to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic domain was found to occur when the channel length is scaled below the ballistic limit that is shown to be the extended version of the long-channel mfp modulated by injections from the contacts, yet the mobility degrades. The mobility degradation is shown to be the cause of resistance quantum in the low-channel length limit. These findings are important in predicting the transport properties of low-dimensional CNTs.

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“…The often used capacitance-based charge model [109] is only valid around equilibrium, but not under non-linear circuit operating conditions. Evaluation of digital I D models has uncovered discontinuities and severe limitations of the usable operating region [110]. This, combined with missing accurate charge descriptions, makes those models unsuitable for HF circuit design [111].…”

Section: B Compact Modelingmentioning

confidence: 99%

CNTFET Technology for RF Applications: Review and Future Perspective

et al. 2021

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RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.

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Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Cited by 17 publications

References 56 publications

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Theoretical Modelling of Charge Transport Properties of Individual Single-Wall Carbon Nanotubes

CNTFET Technology for RF Applications: Review and Future Perspective

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