Analytical determination of the potassium content of single bubbles in annealed tungsten wires

Barna, Á.; Stark, J. P.

doi:10.1007/bf02646417

Cited by 9 publications

(1 citation statement)

References 4 publications

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“…The concentration of built-in oxygen changes, too. On fine crystalline areas it proved to be four times that of the concentration on the areas of single crystallites determined by fine spot electron probe microanalysis [39]. f ) Co-deposition of Ni produces three-dimensional precipitates situated mainly at the grain boundaries ( Fig.…”

Section: Resztltsmentioning

confidence: 89%

Formation of aluminium thin films in the presence of oxygen and nickel

Barna

Radnóczi

et al. 1979

Phys. Stat. Sol. (a)

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After reviewing the structural properties and formation of Al thin films on the basis of literature, the phenomena of crystal growth taking place in vacuum deposited Al films are discussed. The presence of oxygen in the residual gases affects the layer growth of the individual crystallites directly. The adsorbed oxygen accumulates at the growth steps continuously and in consequence of this, oxide precipitates and two‐dimensional oxide films can develop along the steps, hindering the growth of layers. These phenomena depend on the orientation of crystallites and influence both the coalescence of contacting crystallites and their recrystallization in continuous films. The formation of inhomogeneous structures and hillocks is explained using these results.

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Section: Resztltsmentioning

confidence: 89%

Formation of aluminium thin films in the presence of oxygen and nickel

Barna

Radnóczi

et al. 1979

Phys. Stat. Sol. (a)

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Electron optical identification of precipitations in silicon semiconductor devices

Pasemann¹,

Barna

Werner³

et al. 1979

Cryst Res and Technol

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In silicon MOS semiconductor devices precipitations were observed by TEM in the borondiffused regions. They were identified by using selected area diffraction, high resolution lattice plane imaging, Auger spectroscopy and microanalysis of X-rays. The results lead to the conclusion that these particles consist of polycrystalline silicon and that oxygen and nitrogen, probably carbon too are concentrated inside the particles. The formation of these precipitations is only due to the technological process of the device manufactoring and does not depend on the silicon starting material.In Silizium MOS-Halbleiteranordnungen wurden mittels TEM Ausscheidungen in den Bor-diffundierten Gebieten beobachtet. Deren Identifizierung erfolgte durch Feinbereichsbeugung, hochauflosende Netzebenenabbildung, Augerspektroskopie und Mikroanalyse von Rontgenstrahlen. Die Ergebnisse fiihrten zu dem SchluB, daB die Teilchen aus polykristallinem Silizium bestehen und daB Sauerstoff und Stickstoff, wahrscheinlich auch Kohlenstoff, in den Teilchen angereichert sind. Die Bildung dieser Teilchen ist nur durch den technologisohen ProzeB der Bauelementeherstellung bedingt und hLingt nicht vom Silizium-Ausgangsmaterial ab.

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The segregation of iron in tungsten

Uray

Menyhárd

1984

Phys. Stat. Sol. (a)

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Segregation and solution of iron is followed up on a commercial WFe dilute alloy by measuring electrical resistivity, thermopower and — on the fracture surface — AES. The thermopower measures practically only the solute iron concentration in this alloy. At the same time the excess electrical resistivity is sensitive mostly to the concentration of grain boundaries and the AES measures the iron accumulated on the surface of the grain boundaries. According to these measurements grain boundary segregation occurs at temperatures where the bulk diffusion is negligible yet. So this segregation can be explained only by moving grain boundaries, which “sweep over” the crystallites, accumulating the iron atoms. It turned out that only a part of the iron segregated onto the grain boundaries, the larger part segregated onto the second phases, although their total surface is about ten times less. Supposing a state close to the equilibrium, the heats of segregation is estimated to be 50 and 100 to 120 kJ/mol for segregation to grain boundaries and to second phases, respectively.

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Analytical determination of the potassium content of single bubbles in annealed tungsten wires

Cited by 9 publications

References 4 publications

Formation of aluminium thin films in the presence of oxygen and nickel

Formation of aluminium thin films in the presence of oxygen and nickel

Electron optical identification of precipitations in silicon semiconductor devices

The segregation of iron in tungsten

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