1979
DOI: 10.1002/pssa.2210550210
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Formation of aluminium thin films in the presence of oxygen and nickel

Abstract: After reviewing the structural properties and formation of Al thin films on the basis of literature, the phenomena of crystal growth taking place in vacuum deposited Al films are discussed. The presence of oxygen in the residual gases affects the layer growth of the individual crystallites directly. The adsorbed oxygen accumulates at the growth steps continuously and in consequence of this, oxide precipitates and two‐dimensional oxide films can develop along the steps, hindering the growth of layers. These phe… Show more

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Cited by 49 publications
(8 citation statements)
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“…While aluminum has the best optical properties, it unfortunately has a propensity to form oxides during the coating process (21). The oxides tend to dramatically degrade both the reflective properties of the coated film and the resulting performance metrics of the NSOM tip (2225). In our opinion, the metal-coating step in fabricating NSOM probes represents the largest single barrier that must be overcome before carrying out quality NSOM measurements.…”
Section: Methodsmentioning
confidence: 99%
“…While aluminum has the best optical properties, it unfortunately has a propensity to form oxides during the coating process (21). The oxides tend to dramatically degrade both the reflective properties of the coated film and the resulting performance metrics of the NSOM tip (2225). In our opinion, the metal-coating step in fabricating NSOM probes represents the largest single barrier that must be overcome before carrying out quality NSOM measurements.…”
Section: Methodsmentioning
confidence: 99%
“…A good overview is given by Barna and co-workers in a dedicated study on the growth of evaporated aluminum thin films in the presence of oxygen. [1][2][3][4][5][6] They discuss the influence of oxygen as an impurity and describe a change in the film texture together with a decrease in grain size as a function of an increasing oxygen pressure. Similar effects were demonstrated by the same research group during the growth of TiN thin films, 7 by Liu and Barmak for W, 8 by Mahieu et al for Cr, 9 and by Riedl et al for TiAlN.…”
mentioning
confidence: 99%
“…By analogy with the growth phenomena in metal films, this is an indication of clean uninterrupted addition of condensing material by a 'step-flow' mechanism [9] as is also well known for MBE growth of semiconductors [19,20]. Use of oxidizing [8,21,22] or reducing gases may therefore be considered likely to influence this important aspect of growth by enhancing (or reducing) the presence of oxides on the steps [9]. …”
Section: Resultsmentioning
confidence: 99%