Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations

The effects of carrier transport phenomena on the spectral and power characteristics of blue superluminescent light emitting diodes

“…These equations are two level rate equations [13,[16][17][18] for MQW and SCH regions, and spectral density of optical power (s À 1 )…”

“…Escape time, e τ , is the time that carriers escape from the quantum well (2D state) to the SCH layer (3D state) and it is related to thermionic emission over the SCH layers [17]. The carrier thermionic emission/escape time is an important parameter in determining efficiency of QW lasers [17]. Transport time, s τ , describes the carrier transport from the SCH layer to the QW and is controlled by the transverse carrier diffusion in the SCH layer and the carrier capture of the QW [18].…”

“…The carrier transport time in the SCH ( s τ ) is the sum of diffusion time in the SCH ( d τ ) and the capture time in the QW ( c τ ) as: s d c τ τ τ = + . J is the current density and A, B, C, A SCH , B SCH , C SCH , are the Shockley-Read-Hall, spontaneous radiative, and Auger recombination coefficients in MQW and SCH regions, respectively [17,21] and D is drift leakage coefficient in MQW region [22][23][24][25][26][27][28]. The cross section of the SLD's active medium is s wL a = ; w and L a are its ridge width and the thickness of active medium, respectively [14].…”

“…In the case of diffusion time, we calculate it for our model device by using the following equation for electrons [17]:…”

“…This range of mobility corresponds to the diffusion time of 35 ps to 1.9 ps in the SCH layer. The reported values of escape times in InGaN/GaN MQW are several wide range [17,[46][47][48], so, in this work it is assumed to be at the range of 0.35-35 ns. The typical capture times range for QW lasers is 0.3-0.5 ps [49,50], but for InGaN/GaN MQWs have been reported in the range 0.4-0.8 ps by cw-photoluminescence spectroscopy [17,[51][52][53].…”