Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges

Introduction

“…This MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes [45,[92][93][94]. We have emphasized on the basics of the circuit elements (e.g., drain current, threshold voltage, resonant frequency, resistances at switch-ON condition, capacitances, energy stored, cross talk, and switching speed) required for the integrated circuit of the radio-frequency subsystem of the CSDG RF CMOS device and role of these basic circuit elements is also discussed [95][96][97]. However, various properties demonstrated by the switch, due to the cylindrical surrounding double-gate MOSFET, have been discussed in this book.…”

Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects

“…These hot-carriers result from the impact of ionization in the channel near the drain junction, which subsequently are injected into the gate oxide and give rise to a localized and non-uniform pileup of interface states and oxide charges near the drain-channel junction [6,7]. The main cause of the hot-carrier degradation effect in the conventional bulk MOSFETs and multigate MOSFETs for subthreshold regime is already discussed in many works [6][7][8][9]. Therefore, in order to get a global view of DG MOSFET performances under damage conditions, compact analytical current-voltage (I-V) approaches are indispensables not only in compact modeling but also for the comprehension of the fundamentals of such device characteristics.…”

“…Recently, we have studied SCEs in DG MOSFETs including interfacial traps effects by deriving a simple analytical approach for the channel potential in weak inversion regime [8]. Based on this subthreshold behavior analysis including the traps effects, in the present paper, an accurate analytical one-dimensional drain current model including the interfacial hot-carrier effects, after considering the step-function approximation [8,9] for interface charge distribution, is proposed to explain the immunity of the long channel DG MOSFETs design against the hot-carrier effects.…”

“…Based on this subthreshold behavior analysis including the traps effects, in the present paper, an accurate analytical one-dimensional drain current model including the interfacial hot-carrier effects, after considering the step-function approximation [8,9] for interface charge distribution, is proposed to explain the immunity of the long channel DG MOSFETs design against the hot-carrier effects. Quantum confinement effects will not be considered here, since the quantum correction to the subthreshold parameters is much smaller in lightly doped devices compared to highly doped ones [3].…”

A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs

“…A direct way to improve the high frequency and scaling capabilities of the GaN-MESFET is the reduction of its gate length [8]. However, with the reduction in channel length, control of short-channel effects (SCEs) and drain current in subthreshold regime is one of the biggest challenges in further downscaling of the technology [9,10]. The shortchannel effects can be exactly analyzed by numerical simulation, based on a full set of semiconductor device equations or by Monte Carlo simulation [11].…”