A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs

Abstract

In this paper, a new deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D analytical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold behavior for deep submicron GaN-MESFET-based applications. The model predicts that the threshold voltage roll-off, DIBL effects and the subthreshold swing are greatly improved in comparison with the conventional Single-Gate (SG) GaN-MESFETs. The developed approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. DG GaN-MESFET can alleviate the critical problem and further improve the immunity of SCEs of deep submicron GaN-MESFET-based circuit for future power switching and digital gate devices.

Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

“…The same approach is used in this paper for the inclusion of the short-channel effects in the intrinsic capacitances. The minimum potential is given by [12] where λ is the characteristic length, U and V are the surface potentials at the drain and source sides of the devices, respectively, and y min is the point of the minimum potential in the channel, which can be obtained by [24] …”

Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors

“…The solution of (16) for the minimum potential in the channel is given by [1,26,36] where l is characteristic length, which for a triple gate device can be obtained through the average of the two scaling lengths (l 1 related to the width scaling and l 2 related to the height one) [1], y min is the point of the minimum potential in the channel given by (18) [36], U = − Φ 2D , V = V D − Φ 2D and Φ 2D is the potential obtained from the solution of the 2D Poisson equation.…”

Short channel continuous model for double-gate junctionless transistors

“…The decrease of the minimum potential barrier is used according to (10), which differs from (7) by the hyperbolic tangent term, used as a smoothing function in the transition between partial depletion and accumulation r is higher than V FB . (1-tanh (…”

“…So, the effective channel length is given have to be included in (6), substituting L. regime, where V GS (V GS -V FB 4 )) (10) will be used as an ΔV GS = φ min ). Then, s the gate potential ders the decreasing ces, as described in (11) ces is efficient to in triode regime, essary to consider account yet, more hat is the effective drain bias, effect l, φ, is determined (12) nnel length to an Fig.…”