Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

Abstract

A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage expressions of this device. Comparison with the other models reveals a good agreement.

Surface potential–based analysis of ferroelectric dual material gate all around (FE‐DMGAA) TFETs

“…In EMA approach, the potential profile splits into two parts, ie, a solution of one‐dimensional Poisson's equation φ a (r) and other is the solution of two‐dimensional Laplace equation φ b (r, z) …”

Dual material gate-graded channel-gate stack (DMG-GC-Stack) surrounding gate MOSFET: Analytical threshold voltage (V<inf>TH</inf>) and subthreshold swing (S) models

“…Surrounding Gate MOSFET is considered recently as an ideal structure to provide superior electrostatic behavior and is recognized as an important candidate for ultimate CMOS scaling [1][2][3].…”

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

“…(3) [6][7][8]. However, this requires the use of more complex mathematical formulae, and therefore, in our study, we assumed that Ψ 2D (z,r) took on a parabolic dependence in terms of the position in the silicon film as shown below:…”

“…In particular, attention is focused on multiple-gate MOSFETs because of their steep sub-threshold slope and low body-effect coefficient [1][2][3][4][5][6][7][8][9][10][11][12][13]. Among the various types of multiple-gate MOSFETs, SG MOSFETs exhibit the greatest reduction in SCE due to their excellent electrostatic-channel control [1][2][3][4][5][6][7][8][9][10][11]. Therefore, the results of research on SG MOSFETs should be highly helpful in permitting the realization of nanoscale device production in the future.…”