Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers

Park, Honghwi; Lim, Changhee; Lee, Chang-Ju; Choi, Muhan; Jung, Sunghwan

doi:10.1016/j.sse.2019.107660

Cited by 8 publications

(17 citation statements)

References 23 publications

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“…This result suggests one simple approach to minimizing zigzag corrugations, that is, releasing the III-V(100) layer as thin as possible. However, the practical problem is that the minimum spalling depth (released-layer thickness) guaranteeing the reliability of this process is typically limited to 1 to 2 μm ( 11 , 20 ). When the Ni film is too thin, it is difficult to initiate a crack.…”

Section: Resultsmentioning

confidence: 99%

“…This result shows that the strain energy can be controlled by adjusting the Ni thickness. Then, the estimated spalling depth was calculated as a function of the Ni thickness using an analytical model based on delamination theory (11,(45)(46)(47). In this model, the spalling depth is determined from the thermodynamic equilibrium condition in which the total strain energy accumulated in the Ni film and the released layer is balanced with the crystal binding energy of a (100) plane (see fig.…”

Section: Layer-resolved Mechanical Separation Technique For Iii-v Het...mentioning

confidence: 99%

“…Moreover, the thickness of the released layer can be controlled from hundreds of nanometers to tens of micrometers by adjusting the thickness and stress of the Ni film. On the basis of these advantages, the thickness-controlled spalling technique has been applied to a wide range of materials from elemental semiconductors ( 11 , 17 – 24 , 30 , 31 ) to compound semiconductors ( 21 , 25 – 29 ). In particular, this technique has been effectively used in device fabrication with a thin layer of elemental semiconductors (Si and Ge).…”

Section: Introductionmentioning

confidence: 99%

“…For this process, a chemically weak layer is first grown as a sacrificial buffer during a heterostructure epitaxy step, and the weak layer is then selectively etched away for the release of the epitaxial layers on top of the buffer (8)(9)(10). Although this process has been widely used to fabricate thin, flexible, and 3D-integrated structures, it can only be applied to epitaxial heterostructures with extremely high etching selectivity between the sacrificial buffer and other layers and has limitations in high-throughput wafer-scale processes because of the slow lateral etching rate of the sacrificial buffer (11). Another type of the ELO process is a mechanical lift-off technique.…”

Section: Introductionmentioning

confidence: 99%

“…As an alternative approach without using a sacrificial buffer, a mechanical separation technique called thickness-controlled spalling has been actively studied because it enables the fast and kerf-less release of wafer-scale semiconductor layers through a relatively simple and low-temperature process (11,(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31). In this process, a thin single-crystalline semiconductor layer is mechanically released by the stress induced from a stressor film (typically, Ni) deposited on the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

et al. 2022

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Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath the target layers. This requirement severely limits the scope of processable materials and their epi-structures and makes the growth and layer-release process complicated. Here, we report that epitaxial layers in commonly used III-V heterostructures can be precisely released with an atomic-scale surface flatness via a buffer-free separation technique. This result shows that heteroepitaxial interfaces of a normal lattice-matched III-V heterostructure can be mechanically separated without a sacrificial buffer and the target interface for separation can be selectively determined by adjusting process conditions. This technique of selective release of epitaxial layers in III-V heterostructures will provide high fabrication flexibility in compound semiconductor technology.

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Section: Resultsmentioning

confidence: 99%

Section: Layer-resolved Mechanical Separation Technique For Iii-v Het...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

et al. 2022

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Degradation of Edge‐Defined Film‐Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years

Colvin

Davis

2022

Physica Rapid Research Ltrs

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Thin silicon () adoption can provide significantly lower cost. Kerfless technologies provide thin wafers while preventing material from being wasted. Understanding how this family of processing influences module reliability is important. A set of four edge‐defined film‐fed growth (EFG) silicon modules from a ten‐module system in Florida is measured after 22 years of exposure. Power loss rates of 0.58–0.78% year−1 are measured for three modules, while a rate of 1.32% is measured for a module with severe delamination and corrosion. Short‐circuit current degrades between 10.7% and 13.1% for all modules. The losses are primarily optical and recombination based; however, series and shunt resistance effects play a non‐negligible role. Pre‐existing recombination losses exist but are exacerbated via degradation. Optical losses in short‐circuit current are due in part to encapsulant yellowing. Electroluminescence (EL) images display the effects of processing on bulk quality by clearly showing lines of alternating brightness along the wafer length. To the authors’ knowledge, this is the first article displaying suns– data, effective lifetime versus excess carrier density data, and module EL images for EFG silicon‐based modules.

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Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide

Kim,

Ghods

et al. 2023

Small Science

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Transition metal dichalcogenides (TMDCs) have attracted intense interest; however, despite the considerable effort of researchers, a universal manufacturing method that can guarantee both high material quality and throughput has not been realized to date. Herein, a universal approach to producing high‐quality monolayer TMDCs on a large scale via germanium (Ge)‐mediated atomic spalling is presented. Through the modified analytic model, the study verifies that the thin Ge film could be a suitable stressor that effectively reduces the crack propagation depth at the sub‐nanometer range. In particular, an acid‐etching process is not required in the overall atomic spalling process due to the water‐soluble nature of the Ge, enabling it widely applicable to various TMDCs. Under the optimized spalling conditions, a millimeter‐sized monolayer of stable MoS2, as well as unstable MoTe2, is successfully achieved. Through detailed spectroscopic and electrical characterizations, it is confirmed that the proposed methodology for obtaining large‐area atomic layers does not introduce any significant structural defects or chemical contaminations.

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Analytic model of spalling technique for thickness-controlled separation of single-crystalline semiconductor layers

Cited by 8 publications

References 23 publications

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

Degradation of Edge‐Defined Film‐Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years

Nonmetal‐Mediated Atomic Spalling of Large‐Area Monolayer Transition Metal Dichalcogenide

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