Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode

Xue, Peng; Maresca, Luca; Riccio, Michele; Breglio, Giovanni; Irace, Andrea

doi:10.1109/ted.2019.2937059

Cited by 13 publications

(8 citation statements)

References 11 publications

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“…The self-sustained oscillation becomes more unstable with the increase of R GE . This phenomenon contradicts the conventional knowledge presented in [14]- [17], [23]. In the previous studies, the gate resistance is widely acknowledged to have a very strong damping effect on the self-sustained switching oscillation of GaN EHEMTs [17], SiC MOSFET [14], [15], [23] and SiC JFET [16].…”

Section: B Impact Of V Dc On the Self-sustained Oscillationmentioning

confidence: 78%

“…This phenomenon contradicts the conventional knowledge presented in [14]- [17], [23]. In the previous studies, the gate resistance is widely acknowledged to have a very strong damping effect on the self-sustained switching oscillation of GaN EHEMTs [17], SiC MOSFET [14], [15], [23] and SiC JFET [16]. The self-sustained oscillation can be suppressed when few ohms of gate resistance is utilized [15], [17].…”

Section: B Impact Of V Dc On the Self-sustained Oscillationmentioning

confidence: 82%

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Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Xue

Iannuzzo

2022

IEEE Trans. Power Electron.

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This paper presents a comprehensive study on the occurrence mechanism, instability analysis and suppression methods of self-sustained turn-off oscillation which occurs on cascode gallium nitride high electron mobility transistors (cascode GaN HEMTs). In the beginning, the oscillation waveforms are analyzed, which indicate that the occurrence of the oscillation is determined by test circuit instability. Based on the double pulse test, the impact of the load current IL, DC-bus voltage VDC and gate resistance RG on the self-sustained oscillation is identified. To investigate the instability of the resonant circuit, a smallsignal ac model of the resonant circuit is derived. Based on the model, the influences of various parameters on the self-sustained oscillation are analyzed. The analyses reveal the possible methods which can suppress the oscillation. The effectiveness of the proposed methods is validated by the experimental data and simulation results in the end.

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Section: B Impact Of V Dc On the Self-sustained Oscillationmentioning

confidence: 78%

Section: B Impact Of V Dc On the Self-sustained Oscillationmentioning

confidence: 82%

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Xue

Iannuzzo

2022

IEEE Trans. Power Electron.

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“…To investigate the instability of the test circuit using the power loop beads, a small-signal model is derived following the approach presented in [8], [19], [21]- [24]. Fig.…”

Section: Analytical Modeling Of the Test Circuit Utilizing Power Loop...mentioning

confidence: 99%

Ferrite Beads Design to Improve Turn-Off Characteristics of Cascode GaN HEMTs: An Optimum Design Method

Xue

Iannuzzo

2023

IEEE J. Emerg. Sel. Topics Power Electron.

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In this paper, an optimum ferrite beads design method is proposed to suppress the self-sustained turn-off oscillation of cascode gallium nitride high-electron-mobility transistors (GaN HEMTs). At first, the impacts of gate loop beads and power loop beads on the turn-off oscillation of cascode GaN HEMTs are analyzed. The analysis reveals the weak damping effect of gate loop beads on the turn-off oscillation. Next, an analytical method is proposed to design the power loop beads that can achieve maximum effective damping on the turn-off oscillation.The power loop beads introduce extra stray inductance in the power loop, which can induce high voltage overshoot. To tackle the problem, an optimum design method is proposed so that the power loop beads can suppress the oscillation while mitigating the voltage overshoot. The accuracy of the proposed model is validated by the experimental data in the end.

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“…The exploitation of the source inductance to mitigate the turn-on oscillations, however, comes at the cost of worsening the switching performance during the turn-off, as highlighted in [24][25][26]. Indeed, the unavoidable presence of the source inductance and of the gate-drain capacitance is the root cause of a cross-talk phenomenon between the input loop (gate driver) and the output loop (power loop).…”

Section: Transistor Feedback Through the Source Inductancementioning

confidence: 99%

Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

Raviola

Fiori

2021

Signals

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With power designers always demanding for faster power switches, electromagnetic interference has become an issue of primary concern. As known, the commutation of power transistors is the main cause of the electromagnetic noise, which can be worsened by the presence of unwanted oscillations superimposed onto the switching waveforms. This work proposes a solution to mitigate the oscillations caused by the turn-on of a power transistor by exploiting its source inductance plus an external one. In this context, an optimization method is proposed to find the optimal value of the source inductance as a trade-off between oscillation damping and power dissipation. The experimental results performed on a prototyped power converter assess the proposed technique as the spectrum of the conducted emission is attenuated by 20 dB at the oscillation frequency. With respect to traditional solution based on snubbers, the proposed solution results in a similar oscillation damping, but with a 0.5% higher power efficiency.

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Analysis on the Self-Sustained Oscillation of SiC MOSFET Body Diode

Cited by 13 publications

References 11 publications

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression

Ferrite Beads Design to Improve Turn-Off Characteristics of Cascode GaN HEMTs: An Optimum Design Method

Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

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