Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current

Zong-Xin, Mu; Mu, Xiaodong; Chun, Wu; Jia, Li; Chen, Dong

doi:10.7498/aps.60.015204

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Tian Xiubo [25]through the analysis of the high power pulse discharge characteristics, it shows that pulse peak current increase with the increase of voltage in the pulse period; current flowing through the substrate increased with pulse peak current, it indicates that the ionization rate enhancement.Mou Zongxin [26] conducted a preliminary study of high power pulsed unbalanced magnetron sputtering discharge characteristics and parameters, indicating the relationship between pressure and pulse current, there was a high current when the presure at 0.3pa.It is important to better understand the discharge mechanism and explain the ionization rate. Using the established model of theory of plasma sheath [27], fluid theory, which is an effective method to understand on the discharge characteristics of HiPIMS plasma.…”

Section: Thin Films Prepared By Hipimsmentioning

confidence: 99%

New Plasma Surface Processing Technology and its Application

Cao

Chen

2014

AMM

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Plasma surface processing technology can improve the mechanical properties, the corrosion resistance and chemical properties of the parts; therefore it has been widely used in industrial field. Advanced plasma surface processing technology is also constantly innovation, high power pulsed magnetron sputtering technique has been studied and explored by many scholars in recent years, and also gradually began to be used in the industry . This paper mainly introduces the study of HiPIMS dynamic and application over the past ten years. The HiPIMS discharge mechanism research method and theory is summarized .And the influence of the preparation process parameters about voltage, pressure, pulse width and frequency to compound film performance is systematically described, a detection method for thin film by HiPIMS is also introduced. These will provide guidance for the preparation of reactive HiPIMS.

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Section: Thin Films Prepared By Hipimsmentioning

confidence: 99%

New Plasma Surface Processing Technology and its Application

Cao

Chen

2014

AMM

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“…In this paper, the HPPMS discharge is powered via a DC power supply. The cross-field traps secondary electrons that help to improve the pulse current [10] . High-power pulsed unbalanced magnetron sputtering (HPPUMS) has been achieved with such features as very high pulse current, a coaxial coil that controls pulse repetition frequency and breakdown voltage, and a hollow cathode for suppressing the charge scattering and raising the plasma density.…”

Section: Introductionmentioning

confidence: 99%

Discharge Properties of High-Power Pulsed Unbalanced Magnetron Sputtering

Zong-Xin¹,

Liu²,

Zang³

et al. 2011

Plasma Sci. Technol.

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High-power pulsed magnetron sputtering (HPPMS or HiPIMS) is an emerging coating technology that produces very dense plasmas and highly ionized sputtering atoms. This paper is focused on discharge properties, unbalanced features and temporal evolution of pulse current of the HPPMS discharge. A hollow cathode was used to suppress the scattering of charges. A coaxial coil surrounding the target was used to control the breakdown voltage and pulse repetition frequency by varying the coil current. A Langmuir probe and an oscilloscope were used to simultaneously measure the floating potential, pulse voltage and pulse current signals. The pulse power density in the discharge reached 10 kW/cm 2 with frequencies as high as ∼40 Hz and a pulse width about 1∼5 ms. The characteristics of the discharge evolution were analyzed using magnetron discharge dynamics.

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Exploration of the Townsend regime by discharge light emission in a gas discharge device

Kurt

2014

Chinese Phys. B

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The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO 2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage U b , whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission (LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σ t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

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Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current

Cited by 4 publications

References 11 publications

New Plasma Surface Processing Technology and its Application

New Plasma Surface Processing Technology and its Application

Discharge Properties of High-Power Pulsed Unbalanced Magnetron Sputtering

Exploration of the Townsend regime by discharge light emission in a gas discharge device

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