Discharge Properties of High-Power Pulsed Unbalanced Magnetron Sputtering

The pre-ionized 60 MHz very-high-frequency (VHF) magnetron discharge at low pressure, assisted by inductively coupled plasma (ICP) discharge, was developed. The measurement of ion flux density and ion energy to the substrate was carried out by a retarding field energy analyzer. The electric characteristics of discharge were also investigated by voltage-current probe technique. It was found that by reducing the discharge pressure of VHF magnetron discharge from 5 to 1 Pa, the ion flux density increased about four times, meanwhile the ion energy also increased doubly. The electric characteristics of discharge also showed that a little improvement of sputtering effectiveness was achieved by reducing discharge pressure. Therefore, the deposition property of VHF (60 MHz) magnetron sputtering can be improved by reducing the discharge pressure using the ICP-assisted pre-ionized discharge.

Section: Introductionmentioning

confidence: 99%

Ion property and electrical characteristics of 60 MHz very-high-frequency magnetron discharge at low pressure

Jiang¹,

Ye²,

Wang³

et al. 2018

“…Magnetron sputtering is an important technology for deposition of films [6][7][8][9][10][11] and an attractive alternative for preparing Ag films [12][13][14][15][16]. The growth and structure of sputtered Ag films depend on the energy and flux of the ions impacting the substrate.…”

Section: Introductionmentioning

confidence: 99%

Control of growth and structure of Ag films by the driving frequency of magnetron sputtering

Yang

Wang

et al. 2017

The growth and structural properties of Ag films prepared by radio-frequency (2, 13.56 and 27.12 MHz) and very-high-frequency (40.68 and 60 MHz) magnetron sputtering were investigated. Using 2 MHz sputtering, the Ag film has a high deposition rate, a uniform and smooth surface and a good fcc structure. Using 13.56 and 27.12 MHz sputtering, the Ag films still have a high deposition rate and a good fcc structure, but a non-uniform and coarse surface. Using 40.68 MHz sputtering, the Ag film has a moderate deposition rate and a good fcc structure, but a less smooth surface. Using 60 MHz sputtering, the Ag film has a uniform and smooth surface, but a low deposition rate and a poor fcc structure. The growth and structural properties of Ag films are related to the ions' energy and flux density. Therefore, changing the driving frequency is a good way to control the growth and structure of the Ag films.

“…The motivation for preparing silicon on Ag films using VHF magnetron sputtering comes from the following facts. First, magnetron sputtering is an important technology for film deposition [13][14][15][16], and for the epitaxial growth of Si films [17][18][19][20]. Second, VHF magnetron sputtering discharge can produce ions with higher energy and very low flux [21][22][23], and thus the quantity of sputtered Si and the growth of silicon can be controlled well.…”

Section: Introductionmentioning

confidence: 99%

Growth and structural properties of silicon on Ag films prepared by 40.68 MHz very-high-frequency magnetron sputtering

Guo¹,

Ye²,

Wang³

et al. 2017

The growth of silicon on Ag films via 40.68 MHz very-high-frequency (VHF) magnetron sputtering was investigated. The energy distribution and flux density of the ions on the substrate were also measured. The results showed that 40.68 MHz magnetron sputtering can produce ions with higher energy and lower flux density. The impact of these ions onto the grown surface promotes the growth of silicon, which is related to the crystalline nature and microstructure of the underlayer of the Ag films, and there is large particle growth of silicon on Ag films with a preferred orientation of (111), and two-dimensional growth of silicon on Ag films with a better face-centered cubic structure.