Analysis of the oscillation conditions in distributed amplifiers

Gamand, P.

doi:10.1109/22.21642

Cited by 9 publications

(4 citation statements)

References 5 publications

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“…This mechanism was first reported by Kohn and Landauer [3]. Gamand [4] reported an upper limit for the FET gate width, around 150 pm, to avoid this instability. The frequency where this instability will occur is near the cut-off frequency of the amplifier, fc, and is given by [41 This last factor is given by…”

Section: Introductionmentioning

confidence: 63%

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

Paixato

Souza

Kretly

1993

Micro & Optical Tech Letters

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Numerical results are presented to show how series inductive feedback between the source of the FET and ground, in a common‐source configuration, can stabilize a hybrid distributed amplifier. This kind of feedback is useful when using high transconductance FETs. Finally, for a 0.3 × 200‐μm HEMT (NEC 321) in chip form, an unconditionally stable four‐section distributed amplifier is designed using the suggested feedback, without compromising the gain‐bandwidth product. © 1993 John Wiley & Sons, Inc.

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Section: Introductionmentioning

confidence: 63%

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

Paixato

Souza

Kretly

1993

Micro & Optical Tech Letters

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“…The distributed amplifier has been chosen for the first case study, as it is a topology widely used to design very broad band amplifiers, and in the same time is challenging in terms of stability, due to presence of several active devices that produce undesired feedback loops []. In Figure the detailed schematic of the distributed amplifier, used for this case study is shown.…”

Section: Application To Multidevice Circuitsmentioning

confidence: 99%

Process and terminations variations aware stability criteria for microwave amplifiers

Scotti

Tommasino

Trifiletti

2012

Int J RF and Microwave Comp Aid Eng

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Two novel process variations aware, necessary and sufficient conditions suitable for implementation in CAD optimizers are proposed to check amplifiers stability. Case studies are presented, showing that the new criteria allow robust amplifier design, under variation of active device immittance parameters in pre‐specified rectangular regions, due to manufacturing tolerances. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE 23: 619–626, 2013.

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“…It was observed that, as the frequency approaches to the cutoff frequency of the gate and drain synthetic transmission lines, the circuit factors of CSSDA-2 and CDA will be lower than one. By checking the loop-oscillation condition [27] in the CDA and the inter-stage stability circles between the CDA and CSSDA, there is no stability problem in the complete circuit CDA-CSSDA-2. This stability improvement is due to that we can control the cutoff frequency of the synthetic transmission line between the CDA and CSSDA by adjusting the length transmission line and input capacitance of the CSSDA.…”

Section: Mmic Design and Simulationmentioning

confidence: 99%

Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

Deng

Huang

Wang

2003

IEEE Trans. Microwave Theory Techn.

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Using the concept of traveling-wave gain stages, novel GaAs pseudomorphic high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) distributed amplifiers (DAs) are demonstrated to achieve high gain and over several octaves of bandwidth performance simultaneously for microwave and millimeter-wave frequency applications. The cascaded single-stage distributed amplifier (CSSDA) is used as traveling-wave gain stages to improve the gain performance of the conventional distributed amplifier (CDA). By adopting the low-pass filter topology between the CDA and CSSDA and tuning the gain shape of CDA and CSSDA separately, a broad-band and high-gain DA, called CDA-CSSDA-2, was accomplished. The detailed design equations are derived for the broad-band matching design of this CDA-CSSDA-2. Two other MMICs, namely, a two-stage CSSDA called 2-CSSDA, and another twostage design called CDA-CSSDA-1, are also included in this paper. This CDA-CSSDA-2 achieves 22 1.5-dB small-signal gain from 0.1 to 40 GHz with a chip size of 1.5 2 mm 2. It also produces a gain-bandwidth product of 503 GHz, which is the highest among all reported GaAs-based DAs. The flat group delay also demonstrates the feasibility of this design for future digital optical communications and broad-band pulse applications. Index Terms-Broad-band, cascaded single-stage distributed amplifier (CSSDA), conventional distributed amplifier (CDA), distributed amplifier (DA), monolithic microwave integrated circuit (MMIC), traveling-wave gain stage.

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Analysis of the oscillation conditions in distributed amplifiers

Cited by 9 publications

References 5 publications

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

Using inductive series feedback to stabilize a microwave distributed amplifier with high gain fets: A new design approach

Process and terminations variations aware stability criteria for microwave amplifiers

Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

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