Analysis of Silicon Nitride Layers on Silicon by Backscattering and Channeling Effect Measurements

Abstract

Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on singlecrystal silicon. The composition was stoichiometric over the entire layer for high ratios of NHs to SiH 4 used in the deposition reaction at 850°C. For lower ratios, a silicon excess was found, and in extreme cases, the silicon excess was located predominantly near the interface.

Composition and Structure Control by Source Gas Ratio in LPCVD SiN x

“…A similar result was reported for the pyrolysis system of SiI~ and NH8 in an atmospheric pressure cold wall reactor (20). A similar result was reported for the pyrolysis system of SiI~ and NH8 in an atmospheric pressure cold wall reactor (20).…”

“…The resulls are summarized in Fig. Figure 6 shows the relationship between the film atomic ratio and the refractive index, both for the present SiH~CI~-NI-I~ system a~ 770~ and for the SiH4-NH8 system at 850~ (20). With decreasing R, the silicon concentration, Nsi, increases slightly from 3.75 to 3.95 • 1022 cm -3, while the NN decreases from 4.9 to 4.2 • 1022 cm -3.…”

Ion Beam Analysis: A Century of Exploiting the Electronic and Nuclear Structure of the Atom for Materials Characterisation

“…But the technique did not become useful for materials analysis until more convenient silicon diode detec-tors were available, with the first paper by Georges Amsel on Si diode detectors in 1960 [19] and Turkevich's immediate proposal for the Surveyor Moon mission in 1961 [20] with the report in 1967 [21]. Explicit depth profiles were not published until 1970 [22].…”

Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon

“…Thecomposition of all sampies is homogeneous over the entire layer, the silicon substrate the yield ofbackscattered particles is reduced (channeling effect) and a more accurate determination of the nitrogen concentration can be made. These techniques have been used to analyse silicon dioxide layers [3] and nitride layers from SiH 4 and NH 3 [4,5]. For comparison with the backscattering data in this work, other structure dependent measurements as etching rate and index of refraction have been performed.…”

“…These techniques have been used to analyse silicon dioxide layers [3] and nitride layers from SiH 4 and NH 3 [4,5]. For comparison with the backscattering data in this work, other structure dependent measurements as etching rate and index of refraction have been performed.…”