Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon

Meyer, O.; Scherber, W.

doi:10.1016/s0022-3697(71)80156-7

Cited by 24 publications

(1 citation statement)

References 3 publications

(3 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The solid line in Fig. 8 gives the ratio of nitrogen to silicon atoms in the films as determined from back-scattering experiments (11). The higher the silane concentration in the reaction chamber, the higher is the Si concentration in the deposited nitride film.…”

Section: Fig 4 Index Of Refraction As a Function Of Total Pressurementioning

confidence: 99%

Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

Gereth¹,

Scherber²

1972

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Section: Fig 4 Index Of Refraction As a Function Of Total Pressurementioning

confidence: 99%

Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

Gereth¹,

Scherber²

1972

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Impurity incorporation during rf sputtering of silicon oxide layers

Petersson

Linker

Meyer

1972

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

Evaporated Sn layers on Si and sapphire substrates were used to demonstrate the applicability of the backscattering teehnique to measurement of the fraction of covered area, the average thickness of the layer, and the sticking factor for temperatures over the range 77-400 oK. The sticking factor at 293"K was found to be ! of that at 77 and 393°K, and 19% higher at roorn temperature (r. t.) for Sn on Sn as compared with Sn on Si. At 393"K the fraction of covered area was found to be about 60% and the average island thickness was in the range 450-1000 Ä.Backscattering of 4He+ ions in the MeV energy range was previously used to study diffusion processes in thin metal films. 1 In the course of Gur study of diffustön processes at the Cu-CdTe mtertace" we were able to demonstrate that this technique is suitable for study of the intermediate stages of growth of thin films. The intermediate stages" follow nucleation and precede the formation of a continuous film. During the coalescence stage we can measure the fraction of covered area, the average thickness of the layer, and the sticking factor as determined by the substrate material and the substrate temperature. We reporl he re results which demonstrate this application.Sn was evaporated on Si and sapphire substrates overHe+ the temperature range 77-400 o K. This metal was chosen for Its low melting temperature, possibly leading to high surface mobility and facilitating growth of coalescence centers at moderate temperatures (-100 Oe). The backscattering technique is described in detall elsewhere. 4A discontinuous film as a model for the coalescence stage can be constructed by nieans of evaporation onto a substrate through a wire mesh. The wire separatton must be chosen small in comparison with the diameter of the beam (0.6-0.8 :mm). For a continuous film the yield of backscattered particles Is proportional to the number of atoma/cm", This yield will decrease for a discontinuous film, and the amount of the decrease is ENERGY (CHANNEL)proportional to the fraction of uncovered area. Also, inhomogeneity in film thickness will change the shape of the backscattered spectrum. Both effects are illustrated in Fig. 1 in terms of spectra obtained for l-MeV~e+ ions scattered from a discontinuous Cu layer on top of a continuous Cu layer evaporated on Si at r. t, The yield at higher values of energy is the same as that for a thick Cu layer, whereas the. discontinuous film gives a reduced height toward lower-energy values , In addition, a second spectrum is shown for a single discontinuous film on silicon. The wires of the screen do not provide a sharp mask,and a shadow effect is visible which corresponds to a higher fraction of covered area at smaller layer thickness. The observed dependence of the fraction of covered area on the layer thickness corresponds to the scattering distribution of neutral atoms from the wire, for which analytical expressions could be derived. Thus, Fig. 1 I .:°+ We evaporated equal quantities of Sn onto Si at substrate temperatures of 77, 293, and...

show abstract

Analysis of phosphosilicate glass layers by backscattering and channeling effect measurements

Linker

Meyer

Scherber³

1973

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

Rutherford backscattering and channeling effect measurements are used to study the composition of phosphosilicate glass (PSG) layers in the system PSG–SiO2–Si. Using an incident beam of 2.8 MeV 4He+ ions, backscattered particles from P atoms could be well separated from those scattered from Si isotopes in the energy spectra. Phosphorus concentration and phosporus beaviour during anneal treatment was determined from P‐peak analysis. Concerning the absolute values no agreement with the existing phase diagram of the system SiO2–P2O5 could be established. A scattering cross section enlargement of about 20% for oxygen was observed with 2.8 MeV helium ions.

show abstract

Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon

Cited by 24 publications

References 3 publications

Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

Impurity incorporation during rf sputtering of silicon oxide layers

Analysis of phosphosilicate glass layers by backscattering and channeling effect measurements

Contact Info

Product

Resources

About