Analysis of silicon crystal growth using low pressure chemical vapour deposition

Rate-determining process in chemical vapor deposition of SiC on off-axis α-SiC (0001Nakamura1, Kimoto2, Matsunami3 2004Journal of Crystal Growth8140View full textAdd to dashboardCite

“…A similar dependence of growth rate on the total pressure, as in this experimental result, was reported [5][6][7] for homoepitaxial growth on Si ð1 1 1Þ: The homoepitaxial (step-flow) growth rate of monocrystalline Si is inversely proportional to the square of total pressure, as opposed to the inversely-proportional dependence for deposition of polycrystalline Si. A model [8] was proposed to explain the experimental results, where the growth is limited by migration of Si species (Si atoms and/ or SiH x molecules), which is inhibited by hydrogen atoms adsorbed or chemisorbed on a substrate; Competition between Si species and hydrogen atoms for coverage of ''active sites,'' with most of active sites occupied by hydrogen atoms, determines the growth rate.…”

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

“…Under the deposition conditions used in this study, i.e., reduced pressure and a large ratio of hydrogen to silane flow rate, the growth is usually modeled by considering various heterogeneous surface reactions. 28,31,32,40 Because of the relatively high apparent activation energy ͑1.6-2.1 eV in Fig. 4͒, the heterogeneous kinetics involving different surface reactions were examined for our observations of different growth rates for epitaxial and polycrystalline films grown under identical conditions.…”

“…1-5, the deposition kinetics for Si growth is studied. Several publications were found in the literature about the deposition kinetics of epitaxial 15,28-33 and polycrystalline 28,29,31,32,[34][35][36][37][38][39][40] Si film growth from silane performed at deposition pressure ranging from ultrahigh vacuum ͑UHV͒ to atmospheric pressure. Two reaction paths describing the Si growth are homogeneous and heterogeneous decomposition of silane and Si hydrides.…”

Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures

“…2, EA is measured to be equal to 51 kcaY mol for 600 ~ < T < 700~ This value corresponds roughly to the dissociation energy of a silane molecule (20) and is higher than values reported in the literature (4,16,19,21). For the particular results shown in Fig.…”