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Nakamura, Shohei; Kimoto, Tsunenobu; Matsunami, Hiroyuki

doi:10.1016/j.jcrysgro.2004.06.049

Cited by 8 publications

(5 citation statements)

References 10 publications

(18 reference statements)

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“…In this study we completed a matrix of experiments changing the gas carrier flow (50 to 5 slm) and the process pressure (200 to 10 mbar) while keeping most of the remaining parameters constant. All the experimental results were in good agreement with the stagnant-layer model proposed by Nakamura et al [6]. A reduction in hydrogen flow from 50 to 5 slm corresponded to a proportional decrease of growth rate especially in the outlet side of the susceptor; this trend was confirmed at different process pressures.…”

Section: Resultssupporting

confidence: 89%

“…In a previous study by Nakamura et al [6] it was found that the growth rate is directly proportional to the partial pressure of the silicon precursor, to the square root of the carrier gas flow, and to the reciprocal of the process pressure. However, a systematic study on the effect of the pressure and carrier gas flow on high growth rate processes has not yet been done.…”

Section: Introductionmentioning

confidence: 97%

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Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Henry

Andersson

Kordina

et al. 2010

MSF

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Abstract.A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8° off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (σ/mean) over a 2" diameter wafer.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 97%

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Henry

Andersson

Kordina

et al. 2010

MSF

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“…λC 2 H 2 on 4H-SiC (0001 ̄) at 1570 °C is assumed to be equal to λC 2 H 2 on 4H-SiC (0001 ̄) at 1500 °C (open square). 16)…”

Section: Growth Temperature (°C) 1570mentioning

confidence: 99%

“…This was confirmed, for example, in the case of chemical vapor deposition (CVD) of 4H-SiC on on-axis 4H-SiC (0001) by Masumoto et al; spiral growth occurred from threading screw dislocations. 13) These step-flow growths have been analyzed based on the Burton-Cabrera-Frank (BCF) theory 14) not only for SiC CVD [15][16][17] but also for molecular beam epitaxy (MBE) of Si, 18,19) GaAs, 20) InGaAsSb, 21) and GaN. 22,23) In these analyses, the supersaturation at steps (σ step ) had simply been assumed to be zero.…”

mentioning

confidence: 99%

Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Mochizuki¹,

Mishima²

2022

Jpn. J. Appl. Phys.

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Based on the Burton-Cabrera-Frank (BCF) and Cabrera-Levine theories, supersaturation at steps (σstep) during chemical vapor deposition of 4H-SiC (000-1) at 1570oC under the condition of C/Si ratio of unity was estimated from the reported growth rate and cross-sectional profile of a spiral hillock, as a function of surface diffusion length of C2H2 molecules (λC2H2). The previously assumed zero σstep in the BCF theory was found to be possible source of error in the case λC2H2 > 0.63 μm because of the estimated ratio of σstep to the surface supersaturation exceeding 0.1.

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“…Step-flow growth in general had been analyzed based on the Burton-Cabrera-Frank theory 11) not only for SiC CVD [12][13][14][15][16][17][18] but also for MBE of Si, 19,20) GaAs, 21) InGaAsSb, 22) and metalorganic vapor-phase epitaxy of GaN. 23,24) Among these analyses, a supersaturation ratio α, which is the ratio of the adatom concentration to its equilibrium value, was quantitatively discussed in the cases of SiC 12) and GaAs 21) only.…”

mentioning

confidence: 99%

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

Mochizuki,

Mishima

2023

Jpn. J. Appl. Phys.

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Critical supersaturation ratios αcrit during epitaxial growth on 6H-SiC (0001) and (000-1) under carbon- and hydrogen-rich conditions were formerly estimated by assuming disc-shaped critical nuclei whose side surfaces were terminated with silicon and carbon atoms, respectively. Since this assumption contradicts the atomic configurations of possible hexagonal-prism-shaped critical nuclei, we evaluated αcrit by using the reported surface free energies for hydrogen-passivated 3C-SiC surfaces. To account for the observed αcrit being much larger on 6H-SiC (0001) than on 6H-SiC (000-1), we considered that silicon atoms on the side surfaces of hexagonal-prism-shaped critical nuclei be terminated not by carbon but by hydrogen atoms.

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Rate-determining process in chemical vapor deposition of SiC on off-axis α-SiC (0001

Cited by 8 publications

References 10 publications

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock

Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions

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