Analysis of SEB and SEGR in super-junction MOSFETs

Single-event burnout of Super-junction power MOSFETs

“…This table indicates that SEB tolerance of SJ-MOSFET is about the same or even slightly worse than that of standard MOSFET, which is an unexpected result. There are two reasons which could be attributed: 1) the existence of p-trench; and 2) improper assumption of two-dimensional (2-D) simulation [3]. As for 1), SJ-MOSFET has p-n junctions deep in its structure, which means the shorter distance between p-trench and n substrate interface where breakdown occurs.…”

“…While standard power MOSFETs have a lightly-doped n-region to attain high breakdown voltage, both p-trench and n-drift regions of super-junction MOSFETs (SJ-MOSFET) are heavily doped and each doping level is determined to realize full depletion. This heavy doping enables SJ-MOSFETs to realize considerably low on-resistance compared to standard power MOSFETs A previous paper has reported SEB immunity of SJ-MOSFET using simulation [3]. According to the paper, two advantages of [2].…”

Analysis of MOSFET Failure Modes in Bi-directional Phase-Shift Full-Bridge Converters

“…However, most studies have focused on the numerical analysis and the empirical results with the statistical method because the factor of the failure mode is formed from the structure and the manufacturing process of the semiconductor device [13][14][15]. Moreover, the requirement for high efficiency devices has motivated the development of various semiconductor structures of the …”

“…Also, in particular reverse-recovery characteristics of body diode (t rr or Q rr ) and gate charging capacitance (C gd ) are additionally considered. As the body diodes are used to rectify the secondary side of the PSFB converter in the DAB structure, the reverse-recovery current (I rr ), which is determined by the reverse-recovery characteristics of the DAB structure, is reflected on the primary side and added to the voltage stress of the switching devices [12][13][14][15].…”

“…Considering the above-mentioned phenomena, the appropriate design process of the bidirectional PSFB converter should be performed. However, the failure modes occasionally appear in this converter because of the insufficient consideration of the design criteria of the parameters [1,[6][7][8][9]14].…”