Analysis of nitrogen species in titanium oxynitride ALD films

Sowińska, M.; Brizzi, Simone; Das, Chittaranjan; Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gargouri, Hassan; Henkel, Karsten; Schmeißer, Dieter

doi:10.1016/j.apsusc.2016.02.096

Cited by 19 publications

(13 citation statements)

References 35 publications

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“…[16][17][18][19][20][21][22] We have investigated the electronic properties of the Al 2 O 3 films prepared by different ALD processeso nd ifferent substrates. [16][17][18][19][20][21][22] We have investigated the electronic properties of the Al 2 O 3 films prepared by different ALD processeso nd ifferent substrates.…”

Section: Discussionmentioning

confidence: 99%

Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

et al. 2018

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Electrical characterisation of perovskite solar cells consisting of room-temperature atomic-layer-deposited aluminium oxide (RT-ALD-Al O ) film on top of a methyl ammonium lead triiodide (CH NH PbI ) absorber showed excellent stability of the power conversion efficiency (PCE) over a long time. Under the same environmental conditions (for 355 d), the average PCE of solar cells without the ALD layer decreased from 13.6 to 9.6 %, whereas that of solar cells containing 9 ALD cycles of depositing RT-ALD-Al O on top of CH NH PbI increased from 9.4 to 10.8 %. Spectromicroscopic investigations of the ALD/perovskite interface revealed that the maximum PCE with the ALD layer is obtained when the so-called perovskite cleaning process induced by ALD precursors is complete. The PCE enhancement over time is probably related to a self-healing process induced by the RT-ALD-Al O film. This work may provide a new direction for further improving the long-term stability and performance of perovskite solar cells.

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Section: Discussionmentioning

confidence: 99%

Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

et al. 2018

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“…The resPES characterization of the perovskite film was performed at the synchrotron radiation center BESSY‐II/HZB on the PMG2/U49‐2 beamline with the ASAM end‐station . The resPES measurement was carried out by collecting the VB spectra (2 eV–(−35) eV) at the nitrogen 1s absorption edge, by using photons from the energy range of 390 to 410 eV, and an energy step of 0.2 eV.…”

Section: Methodsmentioning

confidence: 99%

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

Kot

Wojciechowski

Snaith

et al. 2018

Chemistry A European J

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Despite fast development of hybrid perovskite solar cells, there are many fundamental questions related to the perovskite film which remain open. For example, there are contradicting theoretical reports on the role of the organic methylammonium cation (CH NH ) in the methylammonium lead triiodide (CH NH PbI ) perovskite film. From one side it is reported that the organic cation does not contribute to electronic structure of the CH NH PbI film. From the other side, valence band maximum fluctuations, dependent on the CH NH rotation, have been theoretically predicted. The resonant X-ray photoelectron spectroscopy results reported here show experimental evidence of nitrogen contribution to the CH NH PbI electronic structure. Moreover, the observed strong resonances of nitrogen with the I 5s and the Pb 5d-6s levels indicate that the CH NH PbI valence band is extended up to ≈18 eV below the Fermi energy, and therefore one should also consider these shallow core levels while modeling its electronic structure.

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“…TiO x N y films were prepared by plasma enhanced ALD using tetrakis(dimethylamino)titanium (TDMAT) with N 2 plasma or TTIP with an NH 3 plasma, in the temperature range of 170–450 °C . Higher nitrogen contents in the films were obtained using a nitrogen‐rich TDMAT precursor and N 2 plasma, rather then using oxygen‐rich TTIP and NH 3 plasma.…”

Section: Thin Oxynitride Film As a Model System In Photoelectrochemicmentioning

confidence: 99%

“…Higher nitrogen contents in the films were obtained using a nitrogen‐rich TDMAT precursor and N 2 plasma, rather then using oxygen‐rich TTIP and NH 3 plasma. [10a] The O/N ratio in the TiO x N y films was found to be critical for the electric properties, such as conductivity, dielectric breakdown, and permittivity. [10b]…”

Section: Thin Oxynitride Film As a Model System In Photoelectrochemicmentioning

confidence: 99%

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LaTiO_xN_y Thin Film Model Systems for Photocatalytic Water Splitting: Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation

Pichler

Haydous

et al. 2017

Adv Funct Materials

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The size of the band gap and the energy position of the band edges make several oxynitride semiconductors promising candidates for efficient hydrogen and oxygen production under solar light illumination. Intense research efforts dedicated to oxynitride materials have unveiled the majority of their most important properties. However, two crucial aspects have received much less attention: One is the critical issue of compositional/structural surface modifications that occur during operation and how these affect photoelectrochemical performance. The second concerns the relation between electrochemical response and the crystallographic surface orientation of the oxynitride semiconductor. These are indeed topics of fundamental importance, since it is exactly at the surface where the visible-light-driven electrochemical reaction takes place. In contrast to conventional powder samples, thin films represent the best model system for these investigations. This study reviews current state-of-theart oxynitride thin film fabrication and characterization, before focusing on LaTiO 2 N, selected as a representative photocatalyst. An investigation of the initial physicochemical evolution of the surface is reported. Then, it is shown that after stabilization the absorbed photon-to-current conversion efficiency of epitaxial thin films can differ by about 50% for different crystallographic surface orientations, and be up to 5 times larger than for polycrystalline samples.

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Analysis of nitrogen species in titanium oxynitride ALD films

Cited by 19 publications

References 35 publications

Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

LaTiO_xN_y Thin Film Model Systems for Photocatalytic Water Splitting: Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation

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Analysis of nitrogen species in titanium oxynitride ALD films

Cited by 19 publications

References 35 publications

Room‐Temperature Atomic‐Layer‐Deposited Al2O3 Improves the Efficiency of Perovskite Solar Cells over Time

Room‐Temperature Atomic‐Layer‐Deposited Al2O3 Improves the Efficiency of Perovskite Solar Cells over Time

Evidence of Nitrogen Contribution to the Electronic Structure of the CH3NH3PbI3 Perovskite

LaTiOxNy Thin Film Model Systems for Photocatalytic Water Splitting: Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation

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Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

Room‐Temperature Atomic‐Layer‐Deposited Al₂O₃ Improves the Efficiency of Perovskite Solar Cells over Time

Evidence of Nitrogen Contribution to the Electronic Structure of the CH₃NH₃PbI₃ Perovskite

LaTiO_xN_y Thin Film Model Systems for Photocatalytic Water Splitting: Physicochemical Evolution of the Solid–Liquid Interface and the Role of the Crystallographic Orientation