Analysis of negative differential conductance of single-island single-electron transistors owing to Coulomb oscillations

Sui, Bingcai; Fang, Liang; Chi, Yaqing; Zhang, Chao

doi:10.1049/iet-cds.2009.0247

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…This distinctive behavior, vividly illustrated in Figure 8a,b, delineates the impact of negative gate voltage V G values on the N-type negative differential resistance region, a phenomenon previously documented [13]. Notably, as V G takes on progressively higher negative values, the region of N-type negative differential resistance gradually fades, and the I D -V DS curves transform into the typical I D -V DS curves of a symmetric SET junction.…”

Section: Results-analysis Simulationsupporting

confidence: 74%

“…The number of electrons inside the quantum dot is precisely controlled by the Coulomb blockade, thus, SETs show I-V characteristic curves that can exhibit Negative Differential Resistance (NDR) regions, which are expected to have new functionalities [5][6][7][8][9][10]. Theoretical investigation about the origin of NDRs has been reported in previous works [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Temperature on a Single-Electron Transistor I-V Curve

Papadopoulou,

Ovaliadis,

Philippousi

et al. 2024

Symmetry

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In this paper, the effect of temperature on Single-Electron Transistor (SET) electrical behavior is investigated. In particular, a study of the current-voltage (I-V) curves according to parameter (temperature and gate voltage) variation is presented. Among others, the interesting phenomenon of the N-type negative differential resistance is reported as the temperature increases from absolute zero (0 K) to room temperature. Finally, theoretical analysis and simulation shows that the choice of the appropriate temperature and gate-voltage combination the SET I-V curves demonstrates either a negative differential resistance region, a switching effect, or a simple resistance behavior.

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Section: Results-analysis Simulationsupporting

confidence: 74%