Tunable Negative Differential Resistance of Single-Electron Transistor Controlled by Capacitance

Chen, Xiaobao; Zhang, Xing; Sui, Bingcai

doi:10.1007/978-3-642-41635-4_24

Cited by 1 publication

(2 citation statements)

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“…In Figure 1, the schematic representation of an SET is depicted, where the top and bottom terminals are designated as the source and the drain terminals, respectively. Various parameters play crucial roles in shaping the device's characteristics, including C G (gate capacitance), R D and R S (junction resistances), as well as C D and C S (junction capacitances) [11]. The intricate interplay of these parameters contributes to the overall behavior of an SET.…”

Section: Results-analysis Simulationmentioning

confidence: 99%

“…The number of electrons inside the quantum dot is precisely controlled by the Coulomb blockade, thus, SETs show I-V characteristic curves that can exhibit Negative Differential Resistance (NDR) regions, which are expected to have new functionalities [5][6][7][8][9][10]. Theoretical investigation about the origin of NDRs has been reported in previous works [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Temperature on a Single-Electron Transistor I-V Curve

Papadopoulou,

Ovaliadis,

Philippousi

et al. 2024

Symmetry

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In this paper, the effect of temperature on Single-Electron Transistor (SET) electrical behavior is investigated. In particular, a study of the current-voltage (I-V) curves according to parameter (temperature and gate voltage) variation is presented. Among others, the interesting phenomenon of the N-type negative differential resistance is reported as the temperature increases from absolute zero (0 K) to room temperature. Finally, theoretical analysis and simulation shows that the choice of the appropriate temperature and gate-voltage combination the SET I-V curves demonstrates either a negative differential resistance region, a switching effect, or a simple resistance behavior.

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Section: Results-analysis Simulationmentioning

confidence: 99%