Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY II

Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

“…The layers were made of pure metals, metal alloys, metal oxides or nitrides. Recently, experiments with a thin C layer and a C-Ni-C multilayer have also been carried out [19].…”

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

“…However in the case of light elements, energy dispersive detectors are not very efficient and, in addition, due to the lower resolution, the fluorescence lines of neighbouring elements will at least partially overlap. This difficulties are reported for the combination of Al and Si in [11]. On the other hand the combination of wavelength-dispersive detection setups, which are more favourable for the detection of low-Z elements, with grazing emission conditions is possible without loosing too much in detection efficiency.…”

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

“…Detection limits of SR-TXRF are at the order of 10 7 -10 8 at/ cm 2 for the direct determination of contamination of transition metals on Si wafers [54][55][56][57][58]. During the last years, the configuration has been optimized as well for low Z elements [56,[59][60][61][62][63] detection limits for Na in the low 10 10 at/cm 2 range are accessible. Besides beneficial detection limits, another argument to apply SR-TXRF is in the capability of doing fast wafer mapping at normal detection limits.…”