Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Kayser, Yves; Banaś, D.; Cao, Wei; Dousse, J.‐Cl.; Hoszowska, J.; Jagodziński, P.; Kavčič, M.; Kubala‐Kukuś, A.; Nowak, S.; Pajek, M.; Szlachetko, Jakub

doi:10.1016/j.sab.2010.02.013

Cited by 14 publications

(9 citation statements)

References 22 publications

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“…With this approach, very precise results in good agreement with SRIM calculations were obtained. [26] In order to verify that the use of a Gaussian for N(z) was the best choice, the angular profiles were also fitted with an asymmetric depth distribution, joined half Gaussians. The results of the fits of the angular profiles with both types of curves together with the accuracy estimation are shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

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Section: Resultsmentioning

confidence: 99%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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“…In particular they are very useful for trace elements' analysis [6,16], characterization of thin layers [7,17] and depth profiling [18][19][20]. The usefulness of grazing XRF techniques for nanoparticle characterization has also been demonstrated [8,[21][22][23][24][25][26].…”

Section: Grazing Angle Geometriesmentioning

confidence: 99%

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Nowak

Banaś

Błchucki

et al. 2014

Spectrochimica Acta Part B: Atomic Spectroscopy

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Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle-and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage.

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“…Like GIXRF, the grazing emission X-ray fluorescence (GEXRF) technique can also be used to determine elemental depth profiles of ULE implants. 14,15 In GEXRF the fluorescence signal is observed relative to the surface under different shallow emission angles in the vicinity of the critical angle. Because of the refraction of the fluorescence X-rays at the surface and the large effective path lengths for the fluorescence X-rays, the probed depth region is limited to a scale ranging from a few nm to several hundred nm, depending on the emission angle.…”

Section: Gixrf and Gexrfmentioning

confidence: 99%

“…35 Thanks to the highresolution of the von Hamos spectrometer and the careful optimization of the experimental fluorescence excitation conditions, the X-ray signals originating from the Al Ka fluorescence line and the Raman scattering from the bulk Si could be completely separated. 14 Thus, no deconvolution of the acquired spectra was necessary. Due to the clean background conditions, the raw count rate in the acquired Al Ka spectra was considered in the angular intensity profiles.…”

Section: Experimental and Data Analysismentioning

confidence: 99%

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

Hönicke

Kayser

Beckhoff

et al. 2012

J. Anal. At. Spectrom.

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In this work two synchrotron radiation-based depth-sensitive X-ray fluorescence techniques, grazing incidence X-ray fluorescence (GIXRF) and grazing emission X-ray fluorescence (GEXRF), are compared and their potential for non-destructive depth-profiling applications is investigated. The depth-profiling capabilities of the two methods are illustrated for five aluminum-implanted silicon wafers all having the same implantation dose of 10 16 atoms per cm 2 but with different implantation energies ranging from 1 keV up to 50 keV. The work was motivated by the ongoing downscaling effort of the microelectronics industry and the resulting need for more sensitive methods for the impurity and dopant depth-profile control. The principles of GIXRF and GEXRF, both based on the refraction of X-rays at the sample surface to enhance the surface-to-bulk ratio of the detected fluorescence signal, are explained. The complementary experimental setups employed at the Physikalisch-Technische Bundesanstalt (PTB) for GIXRF and the University of Fribourg for GEXRF are presented in detail. In particular, for each technique it is shown how the dopant depth profile can be derived from the angular intensity dependence of the Al Ka fluorescence line. The results are compared to theoretical predictions and, for two samples, crosschecked with values obtained from secondary ion mass spectroscopy (SIMS) measurements. A good agreement between the different approaches is found proving that the GIXRF and GEXRF methods can be efficiently employed to extract the dopant depth distribution of ionimplanted samples with good accuracy and over a wide range of implantation energies.

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Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Cited by 14 publications

References 22 publications

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

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