Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices

Chu, Chien-An; Ghafouri‐Shiraz, H.

doi:10.1109/50.317525

Cited by 24 publications

(15 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5a. Experimentally measured values (Chu and Ghafouri-Shiraz 1994) (shown by circles) and the data obtained from Transfer Matrix Model (TMM) analysis (Chu and Ghafouri-Shiraz 1994) (shown by cross marks) are also plotted in Fig. 5a.…”

Section: Resultsmentioning

confidence: 99%

“…Parameters used in simulation in Fig. 5a are same as that in Chu and Ghafouri-Shiraz (1994). SOA parameters are kept identical in all other cases as given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…Simultaneously, urgent need is felt to develop a good circuit based model of SOA, which could lead to a quick understanding of various inherent limitations of switching behaviour of the device which was not studied in that experiment. A number of theoretical circuit models both analytical and numerical, have been proposed in the literature (Chu and Ghafouri-Shiraz 1994;Chu and Ghafouri-Shiraz 1993;O'Mahony 1988;Jou et al 2007;Saleh 1988) for predicting operating characteristics of Traveling Wave SOA (TWSOA). However, these models are not simple and elegant enough to design combinatorial circuits involving many SOAs in the integrated form.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Circuit model for analysis of SOA-based photonic switch

Sengupta¹,

Barman

Basu

2009

Opt Quant Electron

View full text Add to dashboard Cite

This paper presents an equivalent lumped element electric circuit model for traveling wave semiconductor optical amplifier (SOA) in integrated circuit applications. The model facilitates incorporation of chip and package parasitic elements of SOA. The model is used to represent an all optical 2 × 2 switch based on cross gain modulation in SOA capable of operating at an ultra fast speed. SPICE simulation of the switch with the proposed circuit model provides bit error rate (BER) values at the switch output which agrees well with the experimentally measured values at 10 Gb/s. The degradation of switching performance has been examined in terms of bit error rate, modulation bandwidth and switching time in the presence of chip parasitic elements of SOA.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Parameters used in simulation in Fig. 5a are same as that in Chu and Ghafouri-Shiraz (1994). SOA parameters are kept identical in all other cases as given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Circuit model for analysis of SOA-based photonic switch

Sengupta¹,

Barman

Basu

2009

Opt Quant Electron

View full text Add to dashboard Cite

show abstract

“…The SOA modeling parameters used with simulation are listed in Table 1 (Kang et al 2005;Durhuus et al 1992;Yu and Jeppesen 2001). In simulation, we have assumed that the AR coating is thin enough such that the phase is continuous before and after passing through the coatings at the facet (Chu and Ghafouri-Shiraz 1994). …”

Section: Modeling Of a Xpm Wavelength Convertermentioning

confidence: 99%

Theoretical investigation of the input power dynamic range enhancement of XPM wavelength converter using a CW holding beam

et al. 2009

View full text Add to dashboard Cite

The performance of pre-amplified cross-phase modulation (XPM) wavelength converter with a continuous wave (CW) holding beam has been theoretically investigated. To increase the input power dynamic range of the pre-amplified XPM wavelength converter, we apply a CW holding beam to the pre-amplifier of XPM wavelength converter. In our proposed scheme, the input power dynamic range with negative power penalty of 20dB was obtained.Keywords XPM wavelength converter · Pre-amplifier · Input power dynamic range · CW holding beam

show abstract

“…In the simulation, we have assumed that the antireflective ͑AR͒ coating is thin enough so that the phase is continuous before and after passing through the coatings at the facet 16 resulting from and the loss the 3-dB couplers was considered in the Mach-Zehnder interferometer structure.…”

Section: Soa Modelingmentioning

confidence: 99%

Performance variation of preamplifier integrated cross-phase modulation wavelength converter by internal reflectivity of semiconductor optical amplifiers

et al. 2003

View full text Add to dashboard Cite

An analysis of a cross-phase modulation (XPM) wavelength converter integrated with preamplifers for increased input power dynamic range is reported. The performance of the preamplified wavelength converter can be deteriorated by the residual reflectivity of semiconductor optical amplifiers (SOAs) inside the converter. We investigate the tradeoff relationship between the internal reflectivity of SOAs and the performance of the XPM wavelength converter with an integrated preamplifier through bit error rate (BER) calculation. The optimal physical and operating parameters of the preamplified XPM wavelength converter are proposed.

show abstract

Analysis of gain and saturation characteristics of a semiconductor laser optical amplifier using transfer matrices

Cited by 24 publications

References 27 publications

Circuit model for analysis of SOA-based photonic switch

Circuit model for analysis of SOA-based photonic switch

Theoretical investigation of the input power dynamic range enhancement of XPM wavelength converter using a CW holding beam

Performance variation of preamplifier integrated cross-phase modulation wavelength converter by internal reflectivity of semiconductor optical amplifiers

Contact Info

Product

Resources

About