Theoretical investigation of the input power dynamic range enhancement of XPM wavelength converter using a CW holding beam

Abstract-This paper demonstrates a 10 Gbit/s wavelength converting access network utilising a centralised optical processing unit that consolidates multiple low cost PONs onto a DWDM backhaul. The centralised processing unit functions as an amplifier, wavelength converter, pre-chirping stage and optical burst equaliser to map legacy PONs onto a DWDM grid for efficient backhaul transmission and to ease the dynamic range requirement of the 10 Gbit/s burst-mode receiver at the optical line termination (OLT). The dispersion limited performance, wavelength tolerance, and burst-mode dynamic range are evaluated demonstrating a maximum range of 62 km for 20 nm of input wavelength variation and a dynamic range of up to 22 dB.

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Demonstration of a 10 Gbit/s Long Reach Wavelength Converting Optical Access Network

Cao

Mendinueta

Thomsen

et al. 2013

J. Lightwave Technol.

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Theoretical study of polarization insensitivity of carrier-induced refractive index change of multiple quantum well

Miao¹,

Zhou²,

Cui³

et al. 2014

Opt. Express

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Characteristics of polarization insensitivity of carrier-induced refractive index change of 1.55 μm tensile-strained multiple quantum well (MQW) are theoretically investigated. A comprehensive MQW model is proposed to effectively extend the application range of previous models. The model considers the temperature variation as well as the nonuniform distribution of injected carrier in MQW. Tensile-strained MQW is expected to achieve polarization insensitivity of carrier-induced refractive index change over a wide wavelength range as temperature varies from 0°C to 40°C, while the magnitude of refractive index change keeps a large value (more than 3 × 10^-3). And that the polarization insensitivity of refractive index change can maintain for a wide range of carrier concentration. Multiple quantum well with different material and structure parameters is anticipated to have the similar polarization insensitivity of refractive index change, which shows the design flexibility.

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Theoretical study of polarization dependence of carrier-induced refractive index change of quantum dot

et al. 2018

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The influences of dot material component, barrier material component, aspect ratio and carrier density on the refractive index changes of TE mode and TM mode of columnar quantum dot are analyzed, and a multiparameter adjustment method is proposed to realize low polarization dependence of refractive index change. Then the quantum dots with low polarization dependence of refractive index change (<1.5%) within C-band (1530 nm - 1565 nm) are designed, and it shows that quantum dots with different material parameters are anticipated to have similar characteristics of low polarization dependence.

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Theoretical investigation of the input power dynamic range enhancement of XPM wavelength converter using a CW holding beam

Cited by 4 publications

References 21 publications

Demonstration of a 10 Gbit/s Long Reach Wavelength Converting Optical Access Network

Demonstration of a 10 Gbit/s Long Reach Wavelength Converting Optical Access Network

Theoretical study of polarization insensitivity of carrier-induced refractive index change of multiple quantum well

Theoretical study of polarization dependence of carrier-induced refractive index change of quantum dot

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