Analysis of formulas for calculating the main characteristics of backscattered electrons and how they compare to experimental results

Рау, Э. И.; Ditsman, S. A.; Зайцев, С. В.; Lermontov, N. V.; Luk’yanov, A. E.; Kupreenko, S. Yu.

doi:10.3103/s1062873813080364

Cited by 14 publications

(2 citation statements)

References 17 publications

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“…The depth of the yield of secondary electrons for the As 4 Se 96 film is = 4.4 nm. The depth of the output of reflected electrons is determined by the empirical formula [21]: = 0.45 e −0.22( +1) .…”

Section: Discussionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.

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Section: Discussionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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“…However, when the electrons of low (1-8 keV) and medium (8-50 keV) energies decelerate in the semiconductor, only a small part of energy goes to the formation of informative signals, the most part of the energy goes to heating the sample [1,2]. When the target is irradiated by a sharply focused electron beam, the heating of the sample can be significant, which can lead to an increase in the local temperature and, as a consequence, to a change in the characteristics of the semiconductor -this may lead to the necessity to take this into account on carrying out the quantitative measurements.…”

Section: Introductionmentioning

confidence: 99%

On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

Stepovich

Amrastanov

Seregina

et al. 2018

J. Phys.: Conf. Ser.

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Abstract. The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

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Electron-induced effects in Ge-Se films studied by Kelvin probe force microscopy

Bilanych

Shylenko

Lytvyn

et al. 2023

Journal of Non-Crystalline Solids

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Analysis of formulas for calculating the main characteristics of backscattered electrons and how they compare to experimental results

Cited by 14 publications

References 17 publications

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

Electron-induced effects in Ge-Se films studied by Kelvin probe force microscopy

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