Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates

High External Quantum Efficiency Green Light Emitting Diodes on Stress-Manipulated AlNO Buffer Layers

“…The calculated EQE and WPE of the chip were 46.2% and 41.9%, respectively. Table 2 showed the wavelength, EQE, WPE, FWHM, and forward voltage at 20 A/cm 2 of different green LEDs reported in recent literatures [11][12][13][14]27]. It showed that the EQE of this work was higher, along with the much lower forward voltage, which made the WPE significantly improved.…”

“…Moreover, the AlN thin films prepared using the PVD sputtering without oxygen incorporation had a hexagonal wurtzite structure. A small peak of the γ-Al 2 O 3 (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31) plane was observed (yellow dotted line) when the O 2 flow rate was 1 sccm (Buffer B) [20]. With an increasing O2 flow rate, the diffraction peaks of AlN (0002) gradually merged with the small peak of γ-Al 2 O 3 (12-31) plane, indicating the infusion of oxygen in the AlN structure of the hexagonal system.…”

“…Furthermore, the contrasting thermodynamic and structural properties of InN and GaN lead to low miscibility, making it difficult to grow highquality green-emitting InGaN/GaN multiple quantum wells (MQWs) [9]. Several methods have been used to improve the EQE of green LEDs, such as the use of pattern sapphire substrates, non-polar or semi-polar substrates [10], AlGaN ternary quantum well protective layers [11,12], sandwich MQW growth process [13,14], and controlling the strain, field, electronic band mechanism to reduce the influence of QCSE [15,16]. The EQE of the green LEDs has been improved to reach 40%.…”

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

“…where A, B, Ccoefficients of Shockley-Read-Hall (SRH) nonradiative recombination, radiative recombination and nonradiative Auger recombination respectively; ncarrier concentration. A fourth term F(n) is added to the denominator to take into account the charge carrier outflow from a quantum well [14]. The calculated dependences: a) of A, B, C coefficients on temperature are given in [2], b) recombination rate on current for different mechanisms are given in [15].…”

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

“…где n -концентрация носителей, A, B, C -коэффициенты рекомбинации безызлучательной, излучательной и оже. Согласно [33,34], в знаменатель должно быть добавлено слагаемое f (n), связанное с током утечки носителей заряда из квантовых ям. При высоком уровне инжекции поляризационные поля и увеличение дефектности барьеров, прилегающих к активным областям, вызывают отток носителей из квантовых ям [35].…”