High External Quantum Efficiency Green Light Emitting Diodes on Stress-Manipulated AlNO Buffer Layers

Wang, Aiming; Chen, Kaixuan; Li, Jinchai; Kang, Junyong

doi:10.1109/jphot.2022.3140775

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…[ 31 ] Wang et al developed ex situ sputtered AlNO buffer layer on PSS to enhance the green LED efficiency. [ 32 ] The lattice constant of AlNO can be tuned through adjusting oxygen flow. With suitable oxygen composition, TDD and compressive stress caused by lattice mismatch were greatly reduced, paving the way for stress manipulation combining buffer layer with PSS in long‐wavelength LEDs.…”

Section: Template For Long‐wavelength Led Growthmentioning

confidence: 99%

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With the emission wavelength covering the entire visible spectrum, InGaN LEDs find various applications such as solid‐state lightings, full‐color displays, and visible light communication. However, the quantum efficiency of InGaN LEDs suffers from a dramatic decline as the emission wavelength extends from blue to green–red region. This issue restrains the lighting and display applications based on the color‐mixing monolithic lighting source system. In this review, the recent breakthroughs in long‐wavelength InGaN LEDs, together with the challenges and approaches to realize high‐indium‐composition InGaN epilayers, are introduced. These cover the different epitaxial substrates, nucleation layers, and epitaxial structures, especially multiple quantum wells active region. The related studies are also discussed to improve the long‐wavelength LEDs performance from the aspect of crystal quality, growth orientation, carrier‐injection, and 3D nanostructures. Finally, current status and perspectives for future long‐wavelength LEDs development are proposed briefly.

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Section: Template For Long‐wavelength Led Growthmentioning

confidence: 99%

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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“…One important feature for the III-N materials is that their thermal expansion coefficients and lattice constants are different in the different layers [50]. This leads to the so-called ''strain''…”

Section: Structure Description and Simulation Detailsmentioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-thick intrinsic quantum well with (x) as indium mole fraction, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Various characteristics such as current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, have been investigated. By controlling the InxGa1−xN(i) number of quantum wells and their indium mole fraction (0.18 or lower), all MQW LED characteristics including radiative recombination rate, needed current, spectral power and emitted light wavelength, are optimized. Increasing (x) value improves radiative recombination rate, spectral power and band gap with lower needed current. Devices with 6 quantum wells and x = 0.16 or 0.18 exhibit best performance. For power saving and environmental purposes, optimal mole ratio is x = 0.16.

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“…Color versions of one or more of the figures in this article are available online at http://ieeexplore.ieee.org backlight technology for LCD displays and visualization systems. Furthermore, quantum well GaN technology has shown great potential in areas such as lasers, optical communication, and biomedical applications [7], [8], [9], [10], [11], [12]. The presence of defects in quantum wells during the LED growth process can have a considerable impact on its light emission characteristics and current transmission properties, ultimately leading to LED malfunction.…”

Section: Introductionmentioning

confidence: 99%

Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics

Hong,

Sun,

Bao

et al. 2024

IEEE Photonics J.

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Quality of GaN LEDs is closely related to the defects in quantum wells. Effectively evaluating the performance of LEDs is a key step in mass production. Electrical characterization testing is very effective for characterizing the performance of LEDs, and the I-V curve is an important evaluation parameter. In this paper, we analyzed correlation in photoluminescence (PL) spectra and I-V curves among different LEDs and studied the feasibility of using PL to predict and estimate the characteristics of the I-V curves. Firstly, in the experiment, we varied the excitation light power and tested the photoluminescence (PL) spectral characteristics of different samples. Subsequently, I-V tests were conducted on these samples with current injection. The results of the I-V curve tests indicated significant differences among different samples, which were consistent with the PL results. Corresponding carrier transport model was established, and the I-V curves were fitted, resulting in different ideality factors for those samples. The results indicated that samples with lower photoluminescence intensity exhibited a larger ideality factor in the I-V curves. On the contrary, for samples with higher photoluminescence intensity, the resulting ideality factor is smaller, approaching 2. A deeper analysis reveals a negative correlation between the relative strength of the normal peak and the abnormal peak in photoluminescence spectra and the value of the ideality factor. In the future, based on this correlation, photoluminescence-based detection techniques can be used to predict the I-V curve characteristics of LEDs in scenarios where direct current injection is not feasible.

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High External Quantum Efficiency Green Light Emitting Diodes on Stress-Manipulated AlNO Buffer Layers

Cited by 5 publications

References 26 publications

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics

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