A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN / GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN / GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.
Comparison of optical power, external quantum efficiency in InGaN / GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered.
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