Влияние низкой температуры на электрофизические и шумовые характеристики ультрафиолетовых светодиодов на основе структур с квантовыми ямами InGaN/GaN

Abstract

Comparison of optical power, external quantum efficiency in InGaN / GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered.