Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

Durmuş, Haziret; Kılıç, Hamdi Şükür; Gezgi̇n, Serap Yi̇ği̇t; Karataş, Şükrü

doi:10.1007/s12633-016-9456-2

Cited by 14 publications

(1 citation statement)

References 44 publications

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“…and standard deviation σ s = σ so + ρ 3 V , where ρ 2 and ρ 3 are voltage coefficients which may depend on T and quantify the voltage deformation of the BH distribution. The standard deviation is a measure of the barrier homogeneity and the lower value of σ s corresponds to more homogeneous BH, and the temperature dependence of σ s is usually small and can be neglected [71,87,100,101,156,184]. Figure 14 was plotted using the apparent BH data of the 400…”

Section: The Inhomogeneous Barrier Analysis and Mean Barrier Height Imentioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Section: The Inhomogeneous Barrier Analysis and Mean Barrier Height Imentioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

Çіçek

Durmuş

Altındal

2019

J Mater Sci: Mater Electron

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A flexible self-powered ultra-violet photodetector based on sandwiched zinc oxide nanorods between polyaniline layers

Hadizadeh,

Nasirian

2023

J Mater Sci: Mater Electron

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Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

Cited by 14 publications

References 44 publications

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

A flexible self-powered ultra-violet photodetector based on sandwiched zinc oxide nanorods between polyaniline layers

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