Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

Çіçek, Osman; Durmuş, Haziret; Altındal, Ş.

doi:10.1007/s10854-019-02578-1

Cited by 5 publications

(3 citation statements)

References 27 publications

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“…The response time of the characteristic trap changes Meantime, at high frequency conditions, the series resistance will deviate from the predetermined theoretical value due to the disappearance of the interface trap charge. On the contrary, at low frequencies, when the oxide capacitance (C ox ) connects with the space charge capacitance (C sc ), the value of the accumulation region increases with the series resistance due to the interface state showing frequency-dependent properties [28][29][30].…”

Section: Conductivity-voltage Measurementsmentioning

confidence: 99%

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Lü

Yan

et al. 2021

Nanomaterials

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In this paper, the effect of atomic layer deposition-derived laminated interlayer on the interface chemistry and transport characteristics of sputtering-deposited Sm2O3/InP gate stacks have been investigated systematically. Based on X-ray photoelectron spectroscopy (XPS) measurements, it can be noted that ALD-derived Al2O3 interface passivation layer significantly prevents the appearance of substrate diffusion oxides and substantially optimizes gate dielectric performance. The leakage current experimental results confirm that the Sm2O3/Al2O3/InP stacked gate dielectric structure exhibits a lower leakage current density than the other samples, reaching a value of 2.87 × 10−6 A/cm2. In addition, conductivity analysis shows that high-quality metal oxide semiconductor capacitors based on Sm2O3/Al2O3/InP gate stacks have the lowest interfacial density of states (Dit) value of 1.05 × 1013 cm−2 eV−1. The conduction mechanisms of the InP-based MOS capacitors at low temperatures are not yet known, and to further explore the electron transport in InP-based MOS capacitors with different stacked gate dielectric structures, we placed samples for leakage current measurements at low varying temperatures (77–227 K). Based on the measurement results, Sm2O3/Al2O3/InP stacked gate dielectric is a promising candidate for InP-based metal oxide semiconductor field-effect-transistor devices (MOSFET) in the future.

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Section: Conductivity-voltage Measurementsmentioning

confidence: 99%

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Lü

Yan

et al. 2021

Nanomaterials

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“…This behavior shows that the interface trap may have enough energy to jump through traps between the metal (near contact) and the semiconductor in the Si bandgap. Besides, at high frequencies, the charges at the Er2O3/SiO2 interface cannot be able to follow the ac signal because its transport mechanisms are too slow compared to the ac signal [16][17][18].…”

Section: C-v and G/ω-v Characteristicsmentioning

confidence: 99%

“…where C N (=2.82×10 19 cm -3 ) is the effective density of states for n-Si at room temperature and can be calculated by the following equation [17,18]…”

Section: C-v and G/ω-v Characteristicsmentioning

confidence: 99%

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

Mutale¹,

Yılmaz²

2020

RAP Conference Proceedings

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The aim of this paper is to investigate the frequency-dependent electrical characteristics of the Al/Er2O3/SiO2 /n-Si/ Al MOS capacitor deposited by the e-beam PVD technique. The Er2O3/SiO2 films were annealed in the nitrogen ambient for 30 min at 550 o C. The crystal structure and surface morphology of thin films have been investigated by XRD and AFM. The capacitance-voltage(C-V) and conductance-voltage (G/w-V) measurements have been performed in the frequency range of 50kHz-1MHz at room temperature. Furthermore, the frequency effects on the series resistance and interface state density through C-V and G/w-V curves were studied and analyzed. It has been observed that the series resistance gives a peak for each frequency, decreasing and disappearing with increasing frequencies. Also, it has been shown that the density of interface states increases with increasing frequency. The measured and calculated results reveal that the frequency has a significant impact on both Rs and Dit of the fabricated MOS characteristics. These effects are supposed to occur because of the interfacial layer (SiO2) that is contained in between n-Si and Er2O3.

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On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

Tanrıkulu

Akin

2022

J. Electron. Mater.

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Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

Cited by 5 publications

References 27 publications

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

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Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

Cited by 5 publications

References 27 publications

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er2O3/SiO2/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

Contact Info

Product

Resources

About

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM