Analysis of contact effects in fully printed p-channel organic thin film transistors

Rapisarda, M.; Valletta, A.; Daami, Anis; Jacob, S.; Benwadih, M.; Coppard, R.; Fortunato, G.; Mariucci, L.

doi:10.1016/j.orgel.2012.06.003

Cited by 35 publications

(55 citation statements)

References 28 publications

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“…This is evident from the output characteristics shown in Fig. 6 and, according to several studies [51,52,53,54], we verified that it is due to the parasitic contact resistance at the source injecting contact. This is further confirmed by the normalized transfer characteristics shown in Fig.…”

Section: Resultssupporting

confidence: 79%

Unified drain-current model of complementary p- and n-type OTFTs

Torricelli

Ghittorelli

Rapisarda

et al. 2015

Organic Electronics

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Section: Resultssupporting

confidence: 79%

Unified drain-current model of complementary p- and n-type OTFTs

Torricelli

Ghittorelli

Rapisarda

et al. 2015

Organic Electronics

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“…However, the current will be sensitive to changes in source barrier height, ϕ B . More importantly, the current will be sensitive to drain voltage and its respective electric field, which will act to lower the effective height of the barrier leading to the deterioration of the output impedance in saturation unless a field relief structure is incorporated [8,15] In low-field mode, however, the situation is very different. In this case, provided that the current under the pinch-off region (I 2 in Figure 1) is easily supplied by the saturation current of the reverse-biased source barrier, the change of current with gate voltage will depend on the characteristics of the pinch-off region.…”

Section: High-and Low-field Behaviour Of the Sgtmentioning

confidence: 99%

“…In the high-field mode of operation, however, the current is sensitive to drain field [2,8,15], therefore some form of field relief at the drain end of the source is required. This is easily done in silicon technology [3] but in other systems, such as solutionprocessed organics, introducing field relief is more problematic.…”

Section: Potential Applicationsmentioning

confidence: 99%

“…SGT behavior has also been shown in studies of contact effects on organic semiconductors [7,8], and in-depth SGT studies have been recently conducted in conjugated polymer devices [9]. The SGT is an extreme example of a contact effect where the influence of the gate bias on the contact does not just modify FET behavior but completely changes the transistor characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…However, some experimental results [6] and simulations [7,8,13] of the SGT show the current increasing approximately linearly with gate voltage and a near constant g m . This is a characteristic of low-field operation.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low-Field Behavior of Source-Gated Transistors

Shannon

Sporea

Georgakopoulos

et al. 2013

IEEE Trans. Electron Devices

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-A physical description for low-field behavior of a Schottky source-gated transistor (SGT) is outlined where carriers crossing the source barrier by thermionic emission are restricted by JFET action in the pinch-off region at the drain end of the source. This mode of operation leads to transistor characteristics with low saturation voltage and high output impedance without the need for field relief at the edge of the Schottky source barrier and explains many characteristics of the SGT observed experimentally. Two-dimensional device simulations with and without barrier lowering due to the Schottky effect show that transistors can be designed so that the current is independent of source length and thickness variations in the semiconductor. This feature, together with the fact that the current in an SGT is independent of source-drain separation, hypothesizes the fabrication of uniform current sources and other large-area analog circuit blocks with repeatable performance even in imprecise technologies such as high-speed printing.

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New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

et al. 2021

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Source-gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin-film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short-channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low-cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high-performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview.

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Analysis of contact effects in fully printed p-channel organic thin film transistors

Cited by 35 publications

References 28 publications

Unified drain-current model of complementary p- and n-type OTFTs

Unified drain-current model of complementary p- and n-type OTFTs

Low-Field Behavior of Source-Gated Transistors

New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

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