Analysis of amorphous layers on silicon by backscattering and channeling effect measurements

Advanced XPS characterization: XPS-based multi-technique analyses for comprehensive understanding of functional materials

“…189 It is important to note, that the related higher energy technique, RBS, provides beneficial complementary here in that it may probe film thicknesses up to B200 nm due to the deeper probing depth compared with ISS. 229 The efficacy of RBS, however, diminishes with smaller overlayer thicknesses (o3 nm) however, and as such ISS is much more suited for applications such as modelling growth modes on the atomic scale.…”

Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon

“…The composition is found to be stoichiometric in the range of 0·1 ,;;; x ,;;; 0·2. Results given in [5] for nitride layers from SiH 4 and NH 3 show, that with increasing NH 3/SiH4 gas ratio the composition became stoichiometric as an saturation level. With the glow discharge method however it is possible to further increase the N NIN si-ratio.…”

“…A detailed description of the analysis technique has been given elsewhere [3]. For convenience themost important features of the analysis are summarized.…”

“…Thecomposition of all sampies is homogeneous over the entire layer, the silicon substrate the yield ofbackscattered particles is reduced (channeling effect) and a more accurate determination of the nitrogen concentration can be made. These techniques have been used to analyse silicon dioxide layers [3] and nitride layers from SiH 4 and NH 3 [4,5]. For comparison with the backscattering data in this work, other structure dependent measurements as etching rate and index of refraction have been performed.…”

Analysis of silicon nitride layers deposited from SiH4 and N2 on silicon

“…These techniques have been used to analyse silicon dioxide layers [3] and nitride layers from SiH 4 and NH 3 [4,5]. For comparison with the backscattering data in this work, other structure dependent measurements as etching rate and index of refraction have been performed.…”