Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple‐barrier resonant tunneling diode for zero bias detection of submilimeter‐waves

Abstract

Zero bias millimeter‐wave detection has been investigated by using backward diodes with InGaAs‐based or Sb‐based interband tunneling and Schottky contact InGaAs‐ based double‐barrier resonant tunneling diodes (DBRTDs). These were intended to be typical cases where the antenna and the detector are individually designed and mutually connected. On the other hand, in this paper we focus on constructing a monolithic type of rectenna (rectifying antenna) for sub‐millimeter wave detection. Our objective is to propose and analyze zero bias detection properties with an InGaAs/InAlAs triple‐barrier resonant tunneling diode (TBRTD) integrated with a bow‐tie type of broadband self‐complementary antenna. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

“…Recently, negative differential resistance (NDR) devices have attracted considerable attention owing to their folded current–voltage ( I – V ) characteristic (N-shaped I – V curve), which presents multiple threshold voltage values123456789101112131415161718192021222324252627. Because of this remarkable property, studies associated with the NDR devices have been explored for realizing multi-valued logic (MVL) applications17111326.…”

“…The NDR devices that have been researched for the implementation of this MVL system are Esaki diodes234567, resonant tunnelling diodes891011121314151617181920, Gunn diodes, single electron transistors2122 and molecular devices2324. However, at the current stage of research, because most of the Esaki diodes and resonant tunnelling diodes were fabricated in Si–Ge and III–V semiconductors234891011121314, the formation of various types of heterojunctions (type-I, II and III) is limited by threading dislocations, which are normally caused at the junction interface by lattice mismatch during film growth. Although the threading dislocation that increases the valley current of NDR device can be reduced by applying superlattice and nanowire structures, it is hard to avoid that the fabrication process becomes more complex.…”

Detection of terahertz radiation by resonant tunneling nanoheterostructures

“…The current-voltage (I-V) characteristic of RTDs possesses a strong nonlinearity, which makes them also promising for the development of high-frequency radiation detectors [4]. At present, there are numerous experimental works, where a change of ΔI 0 in the DC component I 0 in resonant tunneling structures under the action of an electromagnetic radiation is studied [4][5][6][7][8][9][10]. Both singlewell [6] and double-well [5,[7][8][9][10] structures are studied.…”

“…Both singlewell [6] and double-well [5,[7][8][9][10] structures are studied. The most promising is the possibility of using RTSs in a mode without an external bias [5,6]. A change in I-V characteristic under the action of an alternating signal is observed experimentally for frequencies up to several (3) terahertz [8].…”

Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics

“…Fundamental oscillations over 1 THz have already been demonstrated in recent years [1,2,3]. Detectors based on strong nonlinearity of the RTD is also a promising application [4]. 300 GHz wave transmission has been demonstrated using an RTD detector [5], and an ultrashort time sampling using RTDs have been proposed recently [6].…”