Analysis and optimal design of semi-insulator passivated high-voltage field plate structures and comparison with dielectric passivated structures

Mechanism of current collapse removal in field-plated nitride HFETs

“…In the past, it has been reported that the deposition of FP on top of "semiconducting" dielectric significantly improves the performance of high-power Si devices by providing a leakage path that effectively discharges the surface state charges [12], [13]. The observed drastic difference in the performance of the HFET devices with dielectrics type 1 and 2 can be attributed to the following trapped charge discharging mechanism which is somewhat similar to that observed in Si devices.…”

Effective sticking coefficient measurement of radicals for a‐SIN:H film growth in plasma CVD

“…A schematic diagram of the apparatus is shown in Fig. 1 4 -N 2 gas mixtures. The plasma was generated by a pulse-modulated high-frequency power supply, and the composition, N/(Si+N), of deposited films was about 0.25 [3,4].…”

“…He made a numerical analysis of radical density in SiH 4 -NH 3 and SiH 4 -N 2 gas mixture remote plasmas, and showed that amino-silane compounds become the major deposition precursor in the SiH 4 -NH 3 gas mixture plasma. He also showed that these compounds are hardly generated in the SiH 4 -N 2 gas mixture plasma, and N, NH, and SiH 3 become major precursors.…”

“…Insulating films with approximately stoichiometric composition have been used with regard to the gate dielectric layer in a-Si thin film transistor for LCD and with regard to the passivation layer for LSI [6]. Generally, aSiN:H films are deposited by SiH 4 -NH 3 gas mixture or SiH 4 -N 2 gas mixture. To control the properties of a-SiN:H films in plasma CVD, it is important to study the precursors and the reaction mechanism on the film growing surface.…”

Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

“…In the present situation, since the use of high-k dielectric layer would naturally reduce the electric fields, 29 the use of a long field plate to shape the potential distribution would not be necessary. As a final comment, optimized field-plate engineering could be a potential next step for optimizing HEMT devices, 30 but is beyond the present scope.…”