Effective sticking coefficient measurement of radicals for a‐SIN:H film growth in plasma CVD

Abstract

SUMMARYThe reaction coefficients of radicals on the growing surface of hydrogenated amorphous silicon nitride (aSiN:H) were studied by applying Monte Carlo simulation. These a-SiN:H films were deposited on trench-patterned silicon wafers using two kinds of gas mixture, SiH 4 -NH 3 and SiH 4 -N 2 , and then measured for their film thickness profiles and composition on the trench wall. The derived total loss coefficient, β, of radicals was estimated from comparison between the experimental results and the simulation. On the basis of these results, the main radicals during depositions will be discussed.