Analysis and Modeling of Electroforming in Transition Metal Oxide-Based Memristors and Its Impact on Crossbar Array Density

Amer, Sherif; Hasan, Sakib; Rose, Garrett S.

doi:10.1109/led.2017.2778639

Cited by 12 publications

(7 citation statements)

References 11 publications

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“…In addition, such transistors are generally large compared to the regular devices to accommodate these high forming voltages (Figure 1B). For example, for a 65 nm CMOS process (Beckmann et al, 2016;Amer et al, 2017a) used to prepare 80 nm × 80 nm memristor areas, the minimum length of the transistor used in the 1T1R cell could be as much as 0.5 μm to endure forming voltages up to 3.3 V. In contrast, the minimum length of the regular transistor used for peripheral circuitry is 60 nm with the nominal voltage 1.2 V or 1.0 V, depending on the process. Thus, researchers have focused on lowering the forming voltages to a level of operation that allows for better exploitation of memristive crossbar density (Govoreanu et al, 2011;Koveshnikov et al, 2012;Huang et al, 2013a;Chen, 2013;Kim et al, 2016;Amer et al, 2017c).…”

Section: Introductionmentioning

confidence: 99%

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Zeumault

Alam

Wood

et al. 2021

Front. Nanotechnol.

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In neuromorphic computing, memristors (or “memory resistors”) have been primarily studied as key elements in artificial synapse implementations, where the memristor provides a variable weight with intrinsic long-term memory capabilities, based on its modifiable resistive-switching characteristics. Here, we demonstrate an efficient methodology for simulating resistive-switching of HfO2 memristors within Synopsys TCAD Sentaurus—a well established, versatile framework for electronic device simulation, visualization and modeling. Kinetic Monte Carlo is used to model the temporal dynamics of filament formation and rupture wherein additional band-to-trap electronic transitions are included to account for polaronic effects due to strong electron-lattice coupling in HfO2. The conductive filament is modeled as oxygen vacancies which behave as electron traps as opposed to ionized donors, consistent with recent experimental data showing p-type conductivity in HfOx films having high oxygen vacancy concentrations and ab-initio calculations showing the increased thermodynamic stability of neutral and charged oxygen vacancies under conditions of electron injection. Pulsed IV characteristics are obtained by inputting the dynamic state of the system—which consists of oxygen ions, unoccupied oxygen vacancies, and occupied oxygen vacancies at various positions—into Synopsis TCAD Sentaurus for quasi-static simulations. This allows direct visualization of filament electrostatics as well as the implementation of a nonlocal, trap-assisted-tunneling model to estimate current-voltage characteristics during switching. The model utilizes effective masses and work functions of the top and bottom electrodes as additional parameters influencing filament dynamics. Together, this approach can be used to provide valuable device- and circuit-level insight, such as forming voltage, resistance levels and success rates of programming operations, as we demonstrate.

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Section: Introductionmentioning

confidence: 99%

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Zeumault

Alam

Wood

et al. 2021

Front. Nanotechnol.

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“…Even when the series resistance is clearly influencing the final characteristic the variation over the array is smaller than in the other two array-types. The smaller variation in the formed state potentially reduces the device-to-device variability across the array during switching [30,33]. For a pure memory operation, this type of array is certainly a better choice, however this suffers from the drawback discussed above during the VMM operations.…”

Section: Discussionmentioning

confidence: 99%

A Study of the Electroforming Process in 1T1R Memory Arrays

Son¹,

Torre

Kindsmüller

et al. 2023

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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For reproducible resistive switching in memristive devices, electroforming is a crucial process. However, a deeper understanding of the electroforming process is still lacking due to unavailability of a proper simulation tool. Here, we propose a physics-based compact model for the electroforming of valence change mechanism (VCM) memristive devices. The developed JART VCM Forming model is experimentally validated with ZrOx based memristive device. Further, the electroforming process in different 1T1R memristive arrays is simulated with this model. The study shows that the electrical characteristics of each device in the array after the forming process is influenced by word/bit line series resistance. In addition, control effects depending on the channel width and applied gate voltage of transistor in the 1T1R cell are also investigated with the compact model simulation.

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“…where  is an unknown matrix, while  and  are known matrices. Now, an explicit staggered predictor-corrector procedure based on communication-avoiding Arnoldi (CA-Arnoldi) method has been implemented in (71) for obtaining the corrected displacement. Then we can get the temperature field from (35).…”

Section: Bem Simulation For Micropolar Poro-thermoelastic Fieldsmentioning

confidence: 99%

“…In addition to different nanoscale transistors, the lessons learned during development of different generations of compact models have also been successfully used to model many emerging devices such as metal-oxide-based resistive randomaccess memory (RRAM) devices [71,72], insulator-metal-transition devices [73], biomolecular memristors [74] and memcapacitors [75] etc.…”

Section: Modeling Of Novel Transistors and Emerging Devicesmentioning

confidence: 99%

Modeling and Simulation in Engineering - Selected Problems

Valdman¹,

Marcinkowski²

2020

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with his PhD thesis on modeling of elastoplasticity in 2002. After spending further years at several foreign institutions (Linz, Bergen, Reykjavik, and Leipzig), he returned to Czech Republic and finished his habilitation at the Technical University of Ostrava in 2011. His areas of interest include computational nonlinear mechanics of solids and aposteriori error estimates for nonlinear problems. He has published several vectorized finite element codes in MATLAB.

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Analysis and Modeling of Electroforming in Transition Metal Oxide-Based Memristors and Its Impact on Crossbar Array Density

Cited by 12 publications

References 11 publications

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

A Study of the Electroforming Process in 1T1R Memory Arrays

Modeling and Simulation in Engineering - Selected Problems

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