Analysis and Design of Millimeter-Wave Low-Voltage CMOS Cascode LNA With Magnetic Coupled Technique

Yeh, Han-Chih; Chiong, Chau-Ching; Aloui, Sofiane; Wang, Huei

doi:10.1109/tmtt.2012.2224365

Cited by 66 publications

(27 citation statements)

References 22 publications

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“…In order to further solve the issues in a MMW LNA, the magnetic coupled technique [48] used in the cascode and the multi-cascode configurations are presented. The transformers minimize the effect of the parasitic capacitances of the cascode or the multi-cascode device in the desired band.…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

“…In [49], not only wideband performance but also moderate NF are achieved by using resistive-feedback network, which is composed of a series gate inductor and a parallel tuning capacitor, and inductive-series peaking technique. In [50], a magnetic coupled technique incorporated with the multi-cascode configuration is proposed. The transformers in the multi-cascode configuration resonate the parasitic capacitances of the transistors out.…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

“…The transformers in the multi-cascode configuration resonate the parasitic capacitances of the transistors out. Moreover, a V-band magnetic coupled triple-cascode LNA is proposed in [50], Figure 2 illustrates the circuit topology of the MMW low voltage triple-cascode LNA with magnetic coupled technique and the chip photograph is illustrated in Figure 3. The V-band triple-cascode LNA has a gain of 13.7 dB at 54 GHz and a NF of 5.3 dB at 59.5 GHz, with a power consumption of 14.4 mW at 1.2 V supply voltage.…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

“…Compared with the conventional cascode LNAs, the use of the magnetic coupled technique in a multi-cascode LNA improves significantly the gain performance with a slight degradation of the NF. 2 including all testing pads [50].…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

See 3 more Smart Citations

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

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Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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“…CG stage contributes considerable noise at higher frequencies because of parasitic capacitances [8] and it is difficult to provide output match and tuning same time at load [2]. A very simp le and easy approach is to inject a passive component like inductor to overcome the drawback due to parasitic effects [8], wh ich cancel out all the parasitic capacitance effects involved in the circuit. For the improvement of output match, an extra buffer circuit is added.…”

Section: W-cdma (Wideband Code Division Multip Le Access )mentioning

confidence: 99%

A high-gain Source degenerative Cascode LNA for Wi-MAX and W-CDMA applications at 3.5GHz

Motamarri

Islam

Apurbaranjan

et al. 2014

2014 International Conference on Control, Instrumentation, Communication and Computational Technologies (ICCICCT)

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This paper presents the design and simulation of High gain S ource degenerated Cascode LNA for Wi-max and W-CDMA applications at 3.5GHz. The design uses an enhanced cascade topology to attain improved forward gain and noise figure. Th is design includes lumped elements like inductor, capacitor and resistors to design input and output matching networks. The targeted narrow-band gain, impedance matching and noise figure are achieved at the 3.5GHz . Circuit has been designed Using standard UMC 0.18µm CMOS technology and simulated in the Cadence S pectre RF tool . Targeted narrowband gain, noise figure, are 25dB and 2dB respectively. The designed circuit exhibits narrow-band gain of 27.18 dB and noise figure of 1.7 dB with Input and output return loss of -17.57 dB and -29.21 dB respectively. Circuit operates from the supply voltage of 1.8V and draws a current of 6.39mA.

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A 10‐mW 3.9‐dB NF transformer‐based V‐band low‐noise amplifier in 65‐nm CMOS

Zhao

et al. 2019

Int J Numerical Modelling

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A V-band low-noise amplifier (LNA) employing a Gm-boosting technique is presented in this paper. With the transformers, which are applied between the adjacent stages, the transconductances of the following transistors are boosted. Thus, the gain of the circuit is effectively enhanced. The noise figure (NF) is also decreased with the technique. Utilizing a commercial 65-nm CMOS technology, the LNA is demonstrated. The measurement results show that the LNA achieves a maximum gain of 17.4 dB at 57.1 GHz with 10.9-GHz 3-dB gain bandwidth. The measured NF of the LNA is from 3.95 dB to 4.6 dB at 53 to 64 GHz. The tested input 1-dB gain compression point (IP 1dB ) is −14.2 dBm at 57 GHz. The DC power consumption is only 10 mW with 1-V power supply. The chip area is only 0.255 mm 2 with all testing pads.

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Analysis and Design of Millimeter-Wave Low-Voltage CMOS Cascode LNA With Magnetic Coupled Technique

Cited by 66 publications

References 22 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A high-gain Source degenerative Cascode LNA for Wi-MAX and W-CDMA applications at 3.5GHz

A 10‐mW 3.9‐dB NF transformer‐based V‐band low‐noise amplifier in 65‐nm CMOS

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